The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 2017
Filed:
Oct. 20, 2015
Infineon Technologies Ag, Neubiberg, DE;
Hans-Joachim Schulze, Taufkirchen, DE;
Christian Jaeger, Munich, DE;
Franz Josef Niedernostheide, Hagen a. T.W., DE;
Roman Baburske, Otterfing, DE;
Andre Rainer Stegner, Munich, DE;
Antonio Vellei, Villach, AT;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A semiconductor device includes transistor cells formed along a first surface at a front side of a semiconductor body in a transistor cell area. A drift zone structure forms first pn junctions with body zones of the transistor cells. An auxiliary structure between the drift zone structure and a second surface at a rear side of the semiconductor body includes a first portion that contains deep level dopants requiring at least 150 meV to ionize. A collector structure directly adjoins the auxiliary structure. An injection efficiency of minority carriers from the collector structure into the drift zone structure varies along a direction parallel to the first surface at least in the transistor cell area.