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For the Inventor, By the Inventor

Munich, Germany

Andre Rainer Stegner

USPTO Granted Patents = 18 

Average Co-Inventor Count = 4.1

ph-index = 3

Forward Citations = 23(Granted Patents)


Location History:

  • München, DE (2014)
  • Munich, DE (2016 - 2021)
  • Unterhaching, DE (2021 - 2022)

Company Filing History:

goldMedal18 out of 14,705 
 
Infineon Technologies Ag
 patents

Years Active: 2014-2024

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18 patents (USPTO):
1. 12107141 - Semiconductor device having a silicon carbide drift zone over a silicon carbide field stop zone (2024-10-01),
2. 11302795 - Method of manufacturing a semiconductor device and semiconductor device (2022-04-12),
3. 11282926 - Semiconductor device with a semiconductor body of silicon carbide (2022-03-22),
4. 11264464 - Silicon carbide devices and methods for forming silicon carbide devices (2022-03-01),
5. 11094779 - Semiconductor device having an edge termination region comprising a first edge termination region of a second conductivity type adjacent to a second edge termination region of a first conductivity type (2021-08-17),
6. 11063142 - Semiconductor device including silicon carbide body and method of manufacturing (2021-07-13),
7. 10943979 - Semiconductor device having a semiconductor body composed of silicon carbide (2021-03-09),
8. 10497801 - Method of manufacturing a semiconductor device having an undulated profile of net doping in a drift zone (2019-12-03),
9. 10475911 - Semiconductor device having a source region with chalcogen atoms (2019-11-12),
10. 10424636 - Power semiconductor devices, semiconductor devices and a method for adjusting a number of charge carriers (2019-09-24),
11. 10211325 - Semiconductor device including undulated profile of net doping in a drift zone (2019-02-19),
12. 10205011 - Method for forming a semiconductor device with implanted chalcogen atoms (2019-02-12),
13. 9954068 - Method of forming a transistor, method of patterning a substrate, and transistor (2018-04-24),
14. 9685504 - Semiconductor to metal transition for semiconductor devices (2017-06-20),
15. 9647100 - Semiconductor device with auxiliary structure including deep level dopants (2017-05-09),

Title: The Inventor Spotlight: Andre Rainer Stegner

Introduction:

Andre Rainer Stegner is a prolific inventor based in Munich, Germany, with a remarkable portfolio of 18 patents to his name. His innovative work in the field of semiconductor devices has made significant contributions to the industry.

Latest Patents:

Among his latest patents is the groundbreaking "Semiconductor device having a silicon carbide drift zone over a silicon carbide field stop zone." This patent introduces a semiconductor device with a silicon carbide (SiC) drift zone over a SiC field stop zone and/or a SiC semiconductor substrate. The design focuses on minimizing Zdefects in the SiC drift zone, improving the overall performance of the device. Additionally, his patent for "Method of manufacturing a semiconductor device and semiconductor device" presents a novel approach to manufacturing semiconductor devices using silicon carbide (SiC) semiconductor bodies.

Career Highlights:

Andre Rainer Stegner is currently affiliated with Infineon Technologies AG, a leading semiconductor manufacturing company. His tenure at Infineon Technologies AG has been marked by a series of innovative projects and successful patent applications, solidifying his reputation as a key player in the industry.

Collaborations:

Throughout his career, Andre Rainer Stegner has collaborated with esteemed colleagues such as Hans-Joachim Schulze and Francisco Javier Santos Rodriguez. These collaborations have led to the development of cutting-edge technologies and advancements in the semiconductor field.

Conclusion:

In conclusion, Andre Rainer Stegner's relentless pursuit of innovation and his significant contributions to the semiconductor industry underscore his status as a visionary inventor. With a notable portfolio of patents and a strong presence in the industry, Stegner continues to inspire and drive progress in the field of semiconductor devices.

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