The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 01, 2024
Filed:
Mar. 10, 2022
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Hans-Joachim Schulze, Taufkirchen, DE;
Jens Peter Konrath, Villach, AT;
Andre Rainer Stegner, Unterhaching, DE;
Helmut Strack, Munich, DE;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/04 (2006.01); H01L 29/10 (2006.01); H01L 29/16 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66068 (2013.01); H01L 21/02529 (2013.01); H01L 21/0465 (2013.01); H01L 29/1095 (2013.01); H01L 29/1608 (2013.01); H01L 29/7813 (2013.01);
Abstract
A semiconductor device includes a silicon carbide (SiC) drift zone over a SiC field stop zone and/or a SiC semiconductor substrate. A concentration of Zdefects in the SiC drift zone is at least one order of magnitude smaller than in the SiC field stop zone and/or the SiC semiconductor substrate. Separately or in combination, a concentration of Zdefects in a part of the SiC drift zone is at least one order of magnitude smaller than in another part of the drift zone.