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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12107141 B1

PDFFull Text
Date of Patent:
Oct. 01, 2024

Filed:

Mar. 10, 2022

Semiconductor device having a silicon carbide drift zone over a silicon carbide field stop zone

Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Hans-Joachim Schulze, Taufkirchen, DE;

Jens Peter Konrath, Villach, AT;

Andre Rainer Stegner, Unterhaching, DE;

Helmut Strack, Munich, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:

Murphy, Bilak & Homiller, PLLC

Primary Examiner:

Fazli Erdem

Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/04 (2006.01); H01L 29/10 (2006.01); H01L 29/16 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66068 (2013.01); H01L 21/02529 (2013.01); H01L 21/0465 (2013.01); H01L 29/1095 (2013.01); H01L 29/1608 (2013.01); H01L 29/7813 (2013.01);
Abstract

A semiconductor device includes a silicon carbide (SiC) drift zone over a SiC field stop zone and/or a SiC semiconductor substrate. A concentration of Zdefects in the SiC drift zone is at least one order of magnitude smaller than in the SiC field stop zone and/or the SiC semiconductor substrate. Separately or in combination, a concentration of Zdefects in a part of the SiC drift zone is at least one order of magnitude smaller than in another part of the drift zone.

Find Patent Forward Citations

Schulze, Hans-Joachim. (2024). Semiconductor device having a silicon carbide drift zone over a silicon carbide field stop zone (U.S. Patent No. 12107141). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12107141

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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