The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2021
Filed:
Apr. 25, 2017
Infineon Technologies Ag, Neubiberg, DE;
Philip Christoph Brandt, Oberhaching, DE;
Andre Rainer Stegner, Munich, DE;
Francisco Javier Santos Rodriguez, Villach, AT;
Frank Dieter Pfirsch, Munich, DE;
Hans-Joachim Schulze, Taufkirchen, DE;
Manfred Pfaffenlehner, Munich, DE;
Thomas Auer, Warstein, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
An edge delimits a semiconductor body in a direction parallel to a first side of the semiconductor body. A peripheral area is arranged between the active area and edge. A first semiconductor region of a first conductivity type extends from the active area into the peripheral area. A second semiconductor region of a second conductivity type forms a pn-junction with the first semiconductor region. A first edge termination region of the second conductivity type arranged at the first side adjoins the first semiconductor region, between the second semiconductor region and edge. A second edge termination region of the first conductivity type arranged at the first side and between the first edge termination region and edge has a varying concentration of dopants of the first conductivity type which increases at least next to the first edge termination region substantially linearly with an increasing distance from the first edge termination region.