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For the Inventor, By the Inventor

Munich, Germany

Manfred Pfaffenlehner

USPTO Granted Patents = 23 

Average Co-Inventor Count = 4.7

ph-index = 5

Forward Citations = 64(Granted Patents)


Location History:

  • München, DE (2009 - 2013)
  • Munich, DE (2008 - 2023)

Company Filing History:

goldMedal15 out of 14,705 
 
Infineon Technologies Ag
 patents
silverMedal8 out of 2,093 
 
Infineon Technologies Austria Ag
 patents

Years Active: 2008-2023

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23 patents (USPTO):
1. 11848377 - Semiconductor component with edge termination region (2023-12-19),
2. 11251266 - Power semiconductor device and method of processing a power semiconductor device (2022-02-15),
3. 11094779 - Semiconductor device having an edge termination region comprising a first edge termination region of a second conductivity type adjacent to a second edge termination region of a first conductivity type (2021-08-17),
4. 11018249 - Semiconductor component with edge termination region (2021-05-25),
5. 10998399 - Power semiconductor device (2021-05-04),
6. 10957764 - Vertical semiconductor device (2021-03-23),
7. 10600862 - High voltage termination structure of a power semiconductor device (2020-03-24),
8. 10497801 - Method of manufacturing a semiconductor device having an undulated profile of net doping in a drift zone (2019-12-03),
9. 10211325 - Semiconductor device including undulated profile of net doping in a drift zone (2019-02-19),
10. 9825136 - Semiconductor component and integrated circuit (2017-11-21),
11. 9385181 - Semiconductor diode and method of manufacturing a semiconductor diode (2016-07-05),
12. 9177829 - Semiconductor component having a passivation layer and production method (2015-11-03),
13. 8828810 - Method of producing a semiconductor including two differently doped semiconductor zones (2014-09-09),
14. 8367532 - Semiconductor device and fabrication method (2013-02-05),
15. 8252671 - Semiconductor device and fabrication method (2012-08-28),

Certainly! Here is an article about inventor Manfred Pfaffenlehner:

Title: Manfred Pfaffenlehner: Pioneering Innovations in Semiconductor Technology

Introduction:

Manfred Pfaffenlehner is a prolific inventor based in Munich, Germany, known for his groundbreaking work in the field of semiconductor technology. With a total of 23 patents to his name, Pfaffenlehner has made significant contributions to the development of power semiconductor devices and edge termination techniques.

Latest Patents:

1. **Semiconductor component with edge termination region:** Pfaffenlehner's patent describes a semiconductor component with advanced edge termination structures, enhancing the performance and reliability of the device.

2. **Power semiconductor device and method of processing:** Another patent showcases his expertise in designing power semiconductor devices with innovative features like guard regions and field plate trench structures.

Career Highlights:

Pfaffenlehner has an impressive career history, having worked at renowned companies such as Infineon Technologies AG and Infineon Technologies Austria AG. His expertise and leadership have played a crucial role in driving technological advancements in the semiconductor industry.

Collaborations:

During his career, Pfaffenlehner has collaborated with industry experts such as Hans-Joachim Schulze and Holger Schulze. Together, they have spearheaded research and development projects that have shaped the landscape of semiconductor technology.

Conclusion:

Inventor Manfred Pfaffenlehner stands as a shining example of innovation and excellence in the field of semiconductor technology. His patents and collaborations have not only pushed the boundaries of technological advancement but have also inspired future generations of inventors and engineers to continue striving for excellence in their work.

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