The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2015
Filed:
Sep. 15, 2014
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Hans-Joachim Schulze, Taufkirchen, DE;
Manfred Pfaffenlehner, Munich, DE;
Markus Schmitt, Neubiberg, DE;
Assignee:
Infineon Technologoies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 31/062 (2012.01); H01L 31/113 (2006.01); H01L 31/119 (2006.01); H01L 21/322 (2006.01); H01L 29/32 (2006.01); H01L 29/78 (2006.01); H01L 29/872 (2006.01); H01L 23/29 (2006.01); H01L 21/31 (2006.01); H01L 29/861 (2006.01); H01L 23/31 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3221 (2013.01); H01L 21/31 (2013.01); H01L 23/291 (2013.01); H01L 23/3171 (2013.01); H01L 23/3192 (2013.01); H01L 29/32 (2013.01); H01L 29/7801 (2013.01); H01L 29/8611 (2013.01); H01L 29/872 (2013.01); H01L 29/0619 (2013.01); H01L 29/0657 (2013.01);
Abstract
A semiconductor component and a method for producing a semiconductor component are described. The semiconductor component includes a semiconductor body including an inner zone and an edge zone, and a passivation layer, which is arranged at least on a surface of the semiconductor body adjoining the edge zone. The passivation layer includes a semiconductor oxide and that includes a defect region having crystal defects that serve as getter centers for contaminations.