The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 05, 2013
Filed:
Jul. 26, 2012
Anton Mauder, Kilbermoor, DE;
Hans-joachim Schulze, Ottobrunn, DE;
Frank Hille, München, DE;
Holger Schulze, Villach, AT;
Manfred Pfaffenlehner, München, DE;
Carsten Schäffer, Sattendorf, AT;
Franz-josef Niedernostheide, Münster, DE;
Anton Mauder, Kilbermoor, DE;
Hans-Joachim Schulze, Ottobrunn, DE;
Frank Hille, München, DE;
Holger Schulze, Villach, AT;
Manfred Pfaffenlehner, München, DE;
Carsten Schäffer, Sattendorf, AT;
Franz-Josef Niedernostheide, Münster, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A semiconductor device in one embodiment has a first connection region, a second connection region and a semiconductor volume arranged between the first and second connection regions. Provision is made, within the semiconductor volume, in the vicinity of the second connection region, of a field stop zone for spatially delimiting a space charge zone that can be formed in the semiconductor volume, and of an anode region adjoining the first connection region. The dopant concentration profile within the semiconductor volume is configured such that the integral of the ionized dopant charge over the semiconductor volume, proceeding from an interface of the anode region which faces the second connection region, in the direction of the second connection region, reaches a quantity of charge corresponding to the breakdown charge of the semiconductor device only near the interface of the field stop zone which faces the second connection region.