The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2019
Filed:
Jan. 25, 2019
Infineon Technologies Ag, Neubiberg, DE;
Elmar Falck, Hohenbrunn, DE;
Andreas Haertl, Munich, DE;
Manfred Pfaffenlehner, Munich, DE;
Francisco Javier Santos Rodriguez, Villach, AT;
Daniel Schloegl, Villach, AT;
Hans-Joachim Schulze, Taufkirchen, DE;
Andre Stegner, Munich, DE;
Johannes Georg Laven, Taufkirchen, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A method of manufacturing a semiconductor device includes forming a profile of net doping in a drift zone of a semiconductor body by multiple irradiations with protons and generating hydrogen-related donors by annealing the semiconductor body. At least 50% of a vertical extension of the drift zone between first and second sides of the semiconductor body is undulated and includes multiple doping peak values between 1×10cmand 5×10cm.