The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 05, 2016

Filed:

Jan. 23, 2014
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Hans Peter Felsl, Munich, DE;

Elmar Falck, Ottobrunn, DE;

Manfred Pfaffenlehner, Munich, DE;

Frank Hille, Munich, DE;

Andreas Haertl, Munich, DE;

Holger Schulze, Villach, AT;

Daniel Schloegl, Villach, AT;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/861 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/36 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0603 (2013.01); H01L 29/66128 (2013.01); H01L 29/8611 (2013.01); H01L 29/1608 (2013.01); H01L 29/2003 (2013.01); H01L 29/36 (2013.01);
Abstract

A semiconductor diode includes a semiconductor body having opposite first and second sides. A first and a second semiconductor region are consecutively arranged along a lateral direction at the second side. The first and second semiconductor regions are of opposite first and second conductivity types and are electrically coupled to an electrode at the second side. The semiconductor diode further includes a third semiconductor region of the second conductivity type buried in the semiconductor body at a distance from the second side. The second and third semiconductor regions are separated from each other.


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