The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 09, 2014

Filed:

Apr. 17, 2012
Applicants:

Hans-joachim Schulze, Taufkirchen, DE;

Manfred Pfaffenlehner, Munich, DE;

Inventors:

Hans-Joachim Schulze, Taufkirchen, DE;

Manfred Pfaffenlehner, Munich, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/10 (2006.01); H01L 29/739 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7395 (2013.01); H01L 29/0619 (2013.01); H01L 29/66333 (2013.01); H01L 29/1095 (2013.01); H01L 29/41766 (2013.01); H01L 29/0615 (2013.01);
Abstract

A method for producing a semiconductor component structure in a semiconductor body. In one embodiment, the method includes producing two differently doped semiconductor zones of the same conduction type, and carrying out a first implantation, implanting dopant atoms of a first conduction type into the semiconductor body via one of the sides over the whole area. A mask is produced on the one side, partly leaving free the one side. A second implantation is carried out, implanting dopant atoms of the first conduction type into the region left free by the mask proceeding from the one of the sides.


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