The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2019
Filed:
Jan. 28, 2014
Infineon Technologies Ag, Neubiberg, DE;
Elmar Falck, Hohenbrunn, DE;
Andreas Haertl, Munich, DE;
Manfred Pfaffenlehner, Munich, DE;
Francisco Javier Santos Rodriguez, Villach, AT;
Daniel Schloegl, Villach, AT;
Hans-Joachim Schulze, Taufkirchen, DE;
Andre Stegner, Munich, DE;
Johannes Georg Laven, Taufkirchen, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A semiconductor device includes a semiconductor body having opposite first and second sides. The semiconductor device further includes a drift zone in the semiconductor body between the second side and a pn junction. A profile of net doping of the drift zone along at least 50% of a vertical extension of the drift zone between the first and second sides is undulated and includes doping peak values between 1×10cmand 5×10cm. A device blocking voltage Vis defined by a breakdown voltage of the pn junction between the drift zone and a semiconductor region of opposite conductivity type that is electrically coupled to the first side of the semiconductor body.