Infineon Technologies Ag

Andre Rainer Stegner

Hans-Joachim Schulze

Francisco Javier Santos Rodriguez

Andreas Haertl

Daniel Schloegl

Philip Christoph Brandt

Jens Peter Konrath

Elmar Falck

Manfred Pfaffenlehner

Johannes Georg Laven

Helmut Strack

Wolfgang Bergner

Frank Hille

Hans Peter Felsl

Christoph Weiss

Frank Dieter Pfirsch

Roman Baburske

Thomas Basler

Christian Jaeger

Franz Josef Niedernostheide

Antonio Vellei

Maria Cotorogea

Martin Stutzmann

Christian Hecht

Martin Brandt

Wolfgang Wagner

Thomas Auer

Yvonne Gawlina

Wolfgang Roesener

Georg Seibert

A semiconductor device includes a silicon carbide (SiC) drift zone over a SiC field stop zone and/or a SiC semiconductor substrate. A concentration of Zdefects in the SiC drift zone is at least one order of magnitude smaller than in the SiC field stop zone and/or the SiC semiconductor substrate. Separately or in combination, a concentration of Zdefects in a part of the SiC drift zone is at least one order of magnitude smaller than in another part of the drift zone.

Semiconductor device having a silicon carbide drift zone over a silicon carbide field stop zone

A method of manufacturing a semiconductor device is proposed. A silicon carbide, SiC, semiconductor body is provided. Ions are introduced into the SiC semiconductor body through a first surface of the SiC semiconductor body by at least one ion implantation process. Thereafter, a SiC device layer is formed on the first surface of the SiC semiconductor body. Semiconductor device elements are formed in or over the SiC device layer.

Method of manufacturing a semiconductor device and semiconductor device

A semiconductor device includes a SiC body having a first semiconductor area of a first conductivity type and a second semiconductor area of a second conductivity type. The first semiconductor area is electrically contacted with a first surface of the SiC body and forms a pn junction with the second semiconductor area. The first and second semiconductor areas are arranged on one another in a vertical direction perpendicular to the first surface. The first semiconductor area has first and second dopant species. An average dopant concentration of the first dopant species in a first part of the first semiconductor area adjoining the first surface is greater than an average dopant concentration of the second dopant species. An average dopant concentration of the second dopant species in a second part of the first semiconductor area adjoining the second semiconductor area is greater than a dopant concentration of the first dopant species.

Semiconductor device with a semiconductor body of silicon carbide

A silicon carbide device includes a transistor cell with a front side doping region, a body region, and a drift region. The body region includes a first portion having a first average net doping concentration and a second portion having a second average net doping concentration. The first portion and the second portion have an extension of at least 50 nm in a vertical direction. The first average net doping concentration is at least two times the second average net doping concentration, and the first average net doping concentration is at least 1&#xb7;10cm.

Silicon carbide devices and methods for forming silicon carbide devices

An edge delimits a semiconductor body in a direction parallel to a first side of the semiconductor body. A peripheral area is arranged between the active area and edge. A first semiconductor region of a first conductivity type extends from the active area into the peripheral area. A second semiconductor region of a second conductivity type forms a pn-junction with the first semiconductor region. A first edge termination region of the second conductivity type arranged at the first side adjoins the first semiconductor region, between the second semiconductor region and edge. A second edge termination region of the first conductivity type arranged at the first side and between the first edge termination region and edge has a varying concentration of dopants of the first conductivity type which increases at least next to the first edge termination region substantially linearly with an increasing distance from the first edge termination region.

Semiconductor device having an edge termination region comprising a first edge termination region of a second conductivity type adjacent to a second edge termination region of a first conductivity type

A semiconductor device includes a silicon carbide body that includes a first section and a second section. The first section is adjacent to the second section. A drift region is formed in the first section and the second section. A lattice defect region is in a portion of the drift region in the second section. A first density of lattice defects, which include interstitials and vacancies in the lattice defect region, is at least double a second density of lattice defects, which include interstitials and vacancies in a portion of the drift region outside the lattice defect region.

Semiconductor device including silicon carbide body and method of manufacturing

The disclosure relates to a semiconductor device having a SiC semiconductor body. The SiC semiconductor body includes a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type. The first semiconductor region is electrically contacted at a first surface of the SiC semiconductor body and forms a pn junction with the second semiconductor region. The first semiconductor region and the second semiconductor region are arranged one above the other in a vertical direction perpendicular to the first surface. The first semiconductor region has a first dopant species and a second dopant species.

Semiconductor device having a semiconductor body composed of silicon carbide

A method of manufacturing a semiconductor device includes forming a profile of net doping in a drift zone of a semiconductor body by multiple irradiations with protons and generating hydrogen-related donors by annealing the semiconductor body. At least 50% of a vertical extension of the drift zone between first and second sides of the semiconductor body is undulated and includes multiple doping peak values between 1&#xd7;10cmand 5&#xd7;10cm.

Method of manufacturing a semiconductor device having an undulated profile of net doping in a drift zone

Some embodiments relate to a semiconductor device that includes a body region of a field effect transistor structure formed in a semiconductor substrate between a drift region of the field effect transistor structure and a source region of the field effect transistor structure. The semiconductor substrate includes chalcogen atoms at an atom concentration of less than 1&#xd7;10cmat a p-n junction between the body region and the drift region, and at least part of the source region includes chalcogen atoms at an atom concentration of greater than 1&#xd7;10cm. Additional semiconductor device embodiments and corresponding methods of manufacture are described.

Semiconductor device having a source region with chalcogen atoms

A power semiconductor device includes a semiconductor substrate including at least one electrical structure. The at least one electrical structure has a blocking voltage of more than 20V. Further, the power semiconductor device includes an electrically insulating layer structure formed over at least a portion of a lateral surface of the semiconductor substrate. The electrically insulating layer structure embeds one or more local regions for storing charge carriers. Further, the one or more local regions includes in at least one direction a dimension of less than 200 nm.

Power semiconductor devices, semiconductor devices and a method for adjusting a number of charge carriers

A semiconductor device includes a semiconductor body having opposite first and second sides. The semiconductor device further includes a drift zone in the semiconductor body between the second side and a pn junction. A profile of net doping of the drift zone along at least 50% of a vertical extension of the drift zone between the first and second sides is undulated and includes doping peak values between 1&#xd7;10cmand 5&#xd7;10cm. A device blocking voltage Vis defined by a breakdown voltage of the pn junction between the drift zone and a semiconductor region of opposite conductivity type that is electrically coupled to the first side of the semiconductor body.

Semiconductor device including undulated profile of net doping in a drift zone

Some embodiments relate to a method for forming a semiconductor device. The method includes forming a source region of a field effect transistor structure in a semiconductor substrate. The method further includes forming an oxide layer. The method also includes incorporating atoms of at least one atom type of a group of atom types into at least a part of the source region of the field effect transistor structure after forming the oxide layer. The group of atom types includes chalcogen atoms, silicon atoms and argon atoms.

Method for forming a semiconductor device with implanted chalcogen atoms

A method of forming a transistor having a gate electrode includes forming a sacrificial layer over a semiconductor substrate, forming a patterning layer over the sacrificial layer, patterning the patterning layer to form patterned structures, forming spacers adjacent to sidewalls of the patterned structures, removing the patterned structures, etching through the sacrificial layer using the spacers as an etching mask and etching into the semiconductor substrate, thereby forming trenches in the semiconductor substrate, and filling a conductive material in the trenches in the semiconductor substrate to form the gate electrode.

Method of forming a transistor, method of patterning a substrate, and transistor

A semiconductor device includes a first semiconductor region having first charge carriers of a first conductivity type and a second semiconductor region having second charge carriers. The first semiconductor region includes a transition region in contact with the second semiconductor region, the transition region having a first concentration of the first charge carriers, a contact region having a second concentration of the first charge carriers, wherein the second concentration is higher than the first concentration, and a damage region between the contact region and the transition region. The damage region is configured for reducing lifetime and/or mobility of the first charge carriers of the damage region as compared to the lifetime and/or the mobility of the first charge carriers of the contact region and the transition region.

Semiconductor to metal transition for semiconductor devices

A semiconductor device includes transistor cells formed along a first surface at a front side of a semiconductor body in a transistor cell area. A drift zone structure forms first pn junctions with body zones of the transistor cells. An auxiliary structure between the drift zone structure and a second surface at a rear side of the semiconductor body includes a first portion that contains deep level dopants requiring at least 150 meV to ionize. A collector structure directly adjoins the auxiliary structure. An injection efficiency of minority carriers from the collector structure into the drift zone structure varies along a direction parallel to the first surface at least in the transistor cell area.

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Munich, Germany

Andre Rainer Stegner