The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 12, 2019
Filed:
Feb. 12, 2016
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Hans-Joachim Schulze, Taufkirchen, DE;
Philip Christoph Brandt, Oberhaching, DE;
Andre Rainer Stegner, Munich, DE;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/265 (2006.01); H01L 29/739 (2006.01); H01L 29/66 (2006.01); H01L 29/10 (2006.01); H01L 29/167 (2006.01); H01L 21/22 (2006.01); H01L 21/24 (2006.01); H01L 21/266 (2006.01); H01L 29/45 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7397 (2013.01); H01L 21/22 (2013.01); H01L 21/24 (2013.01); H01L 21/266 (2013.01); H01L 21/26506 (2013.01); H01L 29/1095 (2013.01); H01L 29/167 (2013.01); H01L 29/66348 (2013.01); H01L 21/26586 (2013.01); H01L 29/0619 (2013.01); H01L 29/456 (2013.01);
Abstract
Some embodiments relate to a method for forming a semiconductor device. The method includes forming a source region of a field effect transistor structure in a semiconductor substrate. The method further includes forming an oxide layer. The method also includes incorporating atoms of at least one atom type of a group of atom types into at least a part of the source region of the field effect transistor structure after forming the oxide layer. The group of atom types includes chalcogen atoms, silicon atoms and argon atoms.