The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 09, 2021

Filed:

Feb. 15, 2019
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Andre Rainer Stegner, Unterhaching, DE;

Hans-Joachim Schulze, Taufkirchen, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 29/10 (2006.01); H01L 29/423 (2006.01); H01L 29/861 (2006.01); H01L 29/417 (2006.01); H01L 29/78 (2006.01); H01L 29/167 (2006.01); H01L 29/36 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 29/1095 (2013.01); H01L 29/167 (2013.01); H01L 29/36 (2013.01); H01L 29/41741 (2013.01); H01L 29/4236 (2013.01); H01L 29/7813 (2013.01); H01L 29/8611 (2013.01); H01L 29/861 (2013.01);
Abstract

The disclosure relates to a semiconductor device having a SiC semiconductor body. The SiC semiconductor body includes a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type. The first semiconductor region is electrically contacted at a first surface of the SiC semiconductor body and forms a pn junction with the second semiconductor region. The first semiconductor region and the second semiconductor region are arranged one above the other in a vertical direction perpendicular to the first surface. The first semiconductor region has a first dopant species and a second dopant species.


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