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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11063142 B1

PDFFull Text
Date of Patent:
Jul. 13, 2021

Filed:

Dec. 19, 2019

Semiconductor device including silicon carbide body and method of manufacturing

Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Jens Peter Konrath, Villach, AT;

Wolfgang Bergner, Klagenfurt, AT;

Christian Hecht, Buckenhof, DE;

Hans-Joachim Schulze, Taufkirchen, DE;

Andre Rainer Stegner, Unterhaching, DE;

Assignee:

INFINEON TECHNOLOGIES AG, Neubiberg, DE;

Attorney:

Cooper Legal Group, LLC

Primary Examiner:

Daniel P Shook

Int. Cl.
CPC ...
H01L 29/739 (2006.01); H01L 29/16 (2006.01); H01L 29/32 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 21/04 (2006.01); H01L 29/47 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7397 (2013.01); H01L 21/0455 (2013.01); H01L 29/1608 (2013.01); H01L 29/32 (2013.01); H01L 29/401 (2013.01); H01L 29/47 (2013.01); H01L 29/66068 (2013.01);
Abstract

A semiconductor device includes a silicon carbide body that includes a first section and a second section. The first section is adjacent to the second section. A drift region is formed in the first section and the second section. A lattice defect region is in a portion of the drift region in the second section. A first density of lattice defects, which include interstitials and vacancies in the lattice defect region, is at least double a second density of lattice defects, which include interstitials and vacancies in a portion of the drift region outside the lattice defect region.

Find Patent Forward Citations

Konrath, Jens. (2021). Semiconductor device including silicon carbide body and method of manufacturing (U.S. Patent No. 11063142). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11063142

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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