Infineon Technologies Ag

Infineon Technologies Austria Ag

Siemens Aktiengesellschaft

Franz Josef Niedernostheide

Hans-Joachim Schulze

Christian Philipp Sandow

Vera Van Treek

Frank Dieter Pfirsch

Holger Schulze

Reiner Barthelmess

Manfred Pfaffenlehner

Anton Mauder

Johannes Georg Laven

Roman Baburske

Werner Schustereder

Christian Jaeger

Antonio Vellei

Christoph Weiss

Alexander Susiti

Frank Hille

Thomas Christian Neidhart

Andre Rainer Stegner

Uwe Kellner-Werdehausen

Frank Umbach

Martin Ruff

Gerald Soelkner

Thomas Neidhart

Reinhart Job

A transistor device includes a first silicon nanowire array-MOSFET and a second silicon nanowire array-MOSFET integrated with a bulk drift region. The first silicon nanowire array-MOSFET is configured as an n-MOSFET by substantially only accommodating an electron current, and the second silicon nanowire array-MOSFET is configured as a p-MOSFET by substantially only accommodating a hole electron current. A current strength of a current through the first silicon nanowire array-MOSFET caused by electrons is at least 10 times larger than a current through the first silicon nanowire array-MOSFET caused by holes in an on-state of the transistor device. Further embodiments of transistor devices are described.

Insulated gate bipolar transistor device having a fin structure

A semiconductor body includes first and second opposing surfaces, an edge extending in a vertical direction substantially perpendicular to the first surface, an active area, a peripheral area arranged in a horizontal direction substantially parallel to the first surface between the active area and edge, and a pn-junction extending from the active area into the peripheral area. In the peripheral area the semiconductor device further includes a first conductive region arranged next to the first surface, a second conductive region arranged next to the first surface, and arranged in the horizontal direction between the first conductive region and edge, and a passivation structure including a first portion at least partly covering the first conductive region, a second portion at least partly covering the second conductive region. The first portion has a different layer composition than the second portion and/or a thickness which differs from the thickness of the second portion.

Vertical semiconductor device

Insulated gate bipolar Transistor device having a fin structure

Disclosed is a bipolar semiconductor device, comprising a semiconductor body having a first surface; and a base region of a first doping type and a first emitter region in the semiconductor body, wherein the first emitter region adjoins the first surface and comprises a plurality of first type emitter regions of a second doping type complementary to the first doping type, a plurality of second type emitter regions of the second doping type, a plurality of third type emitter regions of the first doping type, and a recombination region comprising recombination centers, wherein the first type emitter regions and the second type emitter regions extend from the first surface into the semiconductor body, wherein the first type emitter regions have a higher doping concentration and extend deeper into the semiconductor body from the first surface than the second type emitter regions, wherein the third type emitter regions adjoin the first type emitter regions and the second type emitter regions, and wherein the recombination region is located at least in the first type emitter regions and the third type emitter regions.

Bipolar transistor device with an emitter having two types of emitter regions

An insulated gate bipolar transistor device includes a semiconductor substrate having a drift region of an insulated gate bipolar transistor structure, a first fin structure starting from the drift region of the semiconductor substrate and extending orthogonal to a main surface of the semiconductor substrate, and a first gate structure of the insulated gate bipolar transistor structure extending alma at least a part of the first fin structure.

A semiconductor component includes an element composed of a conductive material, which is arranged above a surface of a semiconductor substrate. The element includes an element region not adjoined by any electrical contacts to an overlying or underlying electrically conductive plane. In this case, a surface of the element facing away from the semiconductor substrate is patterned with elevations or depressions and a surface of the element region facing the semiconductor substrate is patterned to a lesser extent or is not patterned.

Semiconductor component and integrated circuit

A semiconductor device includes transistor cells formed along a first surface at a front side of a semiconductor body in a transistor cell area. A drift zone structure forms first pn junctions with body zones of the transistor cells. An auxiliary structure between the drift zone structure and a second surface at a rear side of the semiconductor body includes a first portion that contains deep level dopants requiring at least 150 meV to ionize. A collector structure directly adjoins the auxiliary structure. An injection efficiency of minority carriers from the collector structure into the drift zone structure varies along a direction parallel to the first surface at least in the transistor cell area.

Semiconductor device with auxiliary structure including deep level dopants

A description is given of a method for doping a semiconductor body, and a semiconductor body produced by such a method. The method comprises irradiating the semiconductor body with protons and irradiating the semiconductor body with electrons. After the process of irradiating with protons and after the process of irradiating with electrons, the semiconductor body is subjected to heat treatment in order to attach the protons to vacancies by means of diffusion.

Increasing the doping efficiency during proton irradiation

An insulated gate bipolar transistor device includes a semiconductor substrate having a drift region of an insulated gate bipolar transistor structure. Further, the insulated gate bipolar transistor device includes a first nanowire structure and a first gate structure. The first nanowire structure of the insulated gate bipolar transistor structure is connected to the drift region, and the first gate structure of the insulated gate bipolar transistor structure extends along at least a part of the first nanowire structure.

Insulated gate bipolar transistor device, semiconductor device and method for forming said devices

A semiconductor component includes a semiconductor body having a first side and a second side opposite the first side. In the semiconductor body, a dopant region is formed by a dopant composed of an oxygen complex. The dopant region extends over a section L having a length of at least 10 &#x3bc;m along a direction from the first side to the second side. The dopant region has an oxygen concentration in a range of 1&#xd7;10cmto 5&#xd7;10cmover the section L.

Semiconductor component having a dopant region formed by a dopant composed of an oxygen/vacancy complex

A semiconductor body comprised of a semiconductor material includes a first monocrystalline region of the semiconductor material having a first lattice constant along a reference direction, a second monocrystalline region of the semiconductor material having a second lattice constant, which is different than the first, along the reference direction, and a third, strained monocrystalline region between the first region and the second region.

Semiconductor body with strained monocrystalline region

Semiconductor component comprising a dopant region in a semiconductor body and a method for producing a dopant region in a semiconductor body

A method for fabricating a semiconductor body is presented. The semiconductor body includes a p-conducting zone, an n-conducting zone and a pn junction in a depth Tin the semiconductor body between the p-conducting zone and the n-conducting zone. The method includes providing the semiconductor body, producing the p-doped zone by the diffusion of an impurity that forms an acceptor in a first direction into the semiconductor body, and producing the n-conducting zone by the implantation of protons in the first direction into the semiconductor body into a depth T&#x3e;Tand the subsequent heat treatment of the semiconductor body in order to form hydrogen-induced donors.

Method for fabricating a semiconductor having a graded pn junction

A vertical semiconductor device includes a semiconductor body, and first and second contacts on opposite sides of the semiconductor body. A plurality of regions are formed in the semiconductor body including, in a direction from the first contact to the second contact, a first region of a first conductivity type, a second region of a second conductivity type; and a third region of the first conductivity type. The third region is electrically connected to the second contact. A semiconductor zone of the second conductivity type and increased doping density is arranged in the second region. The semiconductor zone separates a first part of the second region from a second part of the second region. The semiconductor zone has a maximum doping density exceeding about 10cmand a thickness along the direction from the first contact to the second contact of less than about 3 &#x3bc;m.

Growing community of inventors

Muenster, Germany

Franz Josef Niedernostheide