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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9972689 B1

PDFFull Text
Date of Patent:
May. 15, 2018

Filed:

Oct. 23, 2014

Semiconductor device having a surface with ripples

Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Hans-Joachim Schulze, Taufkirchen, DE;

Johannes Laven, Taufkirchen, DE;

Holger Schulze, Villach, AT;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:

Murphy, Bilak & Homiller, PLLC

Primary Examiner:

Thanh T Nguyen

Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 21/225 (2006.01); H01L 21/311 (2006.01); H01L 21/3115 (2006.01); H01L 23/48 (2006.01); H01L 21/265 (2006.01); H01L 21/266 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01); H01L 21/308 (2006.01); H01L 21/3105 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/402 (2013.01); H01L 21/225 (2013.01); H01L 21/266 (2013.01); H01L 21/2652 (2013.01); H01L 21/3085 (2013.01); H01L 21/3105 (2013.01); H01L 21/31111 (2013.01); H01L 21/31144 (2013.01); H01L 21/31155 (2013.01); H01L 23/48 (2013.01); H01L 29/0615 (2013.01); H01L 29/42368 (2013.01); H01L 29/78 (2013.01); H01L 29/7811 (2013.01); H01L 29/0619 (2013.01); H01L 29/404 (2013.01); H01L 2924/0002 (2013.01);
Abstract

According to one embodiment of a semiconductor device, the semiconductor device includes a semiconductor substrate having a first surface, an insulation layer having a laterally varying thickness on the first surface, and a metal layer on the first surface. The insulation layer has ripples in its surface facing the metal layer. According to another embodiment of a semiconductor device, the semiconductor device includes a semiconductor substrate having a first surface and including at least one of a laterally varying thickness and an inclined first surface. The first surface of the semiconductor substrate has ripples.

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