Scottsdale, AZ, United States of America

Michael A Briere

This inventor holds 113 USPTO granted patents and 23 published patent applications and 14 EPO patents, primarily in III-Nitride Semiconductors (CPC class H01L29-2003). Top assignees: International Rectifier Corporation, Infineon Technologies Americas Corp., Picor Corporation. Active years: 2005-2025.

USPTO Granted Patents = 113 (Patent Applications = 23)

% Patents Active = 76.1

EPO Patents = 14 (Patent Applications = 43)

Average Co-Inventor Count = 1.2

ph-index = 11

Forward Citations = 530(Granted Patents)

Forward Citations (Not Self Cited) = 400(Dec 10, 2025)

Inventors with similar research interests:

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Location History:

West Greenwich, RI (US) (2005 - 2007)
Redondo Beach, CA (US) (2013 - 2015)
Manhattan Beach, CA (US) (2008 - 2016)
Woonsocket, RI (US) (2010 - 2017)
Scottsdale, AZ (US) (2013 - 2023)

Company Filing History:

65 out of 1,231

International Rectifier Corporation

patents

43 out of 333

Infineon Technologies Americas Corp.

Years Active: 2005-2025

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Areas of Expertise:

III-Nitride Device

Power Converter

Transistor

Semiconductor Structure

Group III-V

Integrated Device

Field Plate

Heat Spreader

High Voltage

Delamination Prevention

Programmable Gate

Composite Device

113 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12191302 - III-nitride device (2025-01-07),

2. 11605628 - Integrated III-nitride and silicon device (2023-03-14),

3. 10269903 - Semiconductor structure having graded transition bodies (2019-04-23),

4. 10084047 - Group III-V device structure with variable impurity concentration (2018-09-25),

5. 10074729 - Forming highly conductive source/drain contacts in III-Nitride transistors (2018-09-11),

6. 9837495 - III-nitride semiconductor structures with strain absorbing interlayers (2017-12-05),

7. 9831312 - Group III-V device structure having a selectively reduced impurity concentration (2017-11-28),

8. 9793259 - Integrated semiconductor device (2017-10-17),

9. 9721791 - Method of fabricating III-nitride semiconductor dies (2017-08-01),

10. 9691889 - Integrated power device (2017-06-27),

11. 9673286 - Group III-V transistor with semiconductor field plate (2017-06-06),

12. 9577612 - Power converter with split voltage supply (2017-02-21),

13. 9564498 - Transistor with elevated drain termination (2017-02-07),

14. 9564492 - Group III-V device with a selectively modified impurity concentration (2017-02-07),

15. 9530877 - Enhancement mode III-nitride transistor (2016-12-27),

Title: The Innovations of Michael A. Briere: Pioneering Semiconductor Technologies

Introduction:

Michael A. Briere, a notable inventor hailing from Scottsdale, AZ (US), has left a significant mark in the field of semiconductor technology with a remarkable portfolio of 112 patents.

Latest Patents:

Among his latest patents, one stands out - the Integrated III-nitride and silicon device. This patent showcases a cutting-edge III-nitride device integrated with a silicon body containing an integrated circuit, revolutionizing the semiconductor industry. Another patent, the Semiconductor structure having graded transition bodies, demonstrates Briere's expertise in reducing strain in semiconductor structures through innovative design.

Career Highlights:

Briere made substantial contributions during his tenure at renowned companies like International Rectifier Corporation and Infineon Technologies Americas Corp.. His expertise and commitment to innovation played a vital role in shaping the semiconductor industry.

Collaborations:

Throughout his career, Briere collaborated with esteemed professionals like Jason Zhang and Paul Bridger, leveraging their collective expertise to push the boundaries of semiconductor technology. These collaborations fostered a culture of innovation and excellence, leading to groundbreaking inventions.

Conclusion:

In conclusion, Michael A. Briere's prolific career and dedication to innovation have established him as a trailblazer in the semiconductor industry. His patents and collaborations reflect his passion for pushing the boundaries of technology, inspiring future generations of inventors and innovators.