The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 07, 2017

Filed:

Sep. 03, 2015
Applicant:

Infineon Technologies Americas Corp., El Segundo, CA (US);

Inventor:

Michael A. Briere, Scottsdale, AZ (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/20 (2006.01); H01L 21/02 (2006.01); H01L 29/36 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01); H01L 29/15 (2006.01); H01L 29/205 (2006.01); H01L 29/10 (2006.01); H01L 29/207 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/2003 (2013.01); H01L 21/0237 (2013.01); H01L 21/0251 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02389 (2013.01); H01L 21/02455 (2013.01); H01L 21/02458 (2013.01); H01L 21/02505 (2013.01); H01L 21/02584 (2013.01); H01L 21/02634 (2013.01); H01L 29/1095 (2013.01); H01L 29/157 (2013.01); H01L 29/205 (2013.01); H01L 29/207 (2013.01); H01L 29/36 (2013.01); H01L 29/66431 (2013.01); H01L 29/66462 (2013.01); H01L 29/778 (2013.01); H01L 29/7787 (2013.01); H01L 29/78 (2013.01);
Abstract

There are disclosed herein various implementations of a semiconductor structure and method. The semiconductor structure comprises a substrate, a transition body over the substrate, and a group III-V intermediate body having a bottom surface over the transition body. The semiconductor structure also includes a group III-V device layer over a top surface of the group III-V intermediate body. The group III-V intermediate body has a continuously reduced impurity concentration wherein a higher impurity concentration at the bottom surface is continuously reduced to a lower impurity concentration at the top surface.


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