The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2019
Filed:
Nov. 29, 2017
Infineon Technologies Americas Corp., El Segundo, CA (US);
Michael A. Briere, Scottsdale, AZ (US);
Infineon Technologies Americas Corp., El Segundo, CA (US);
Abstract
A semiconductor structure includes a substrate, a first graded transition body over the substrate, a second transition body and a III-Nitride semiconductor layer over the second transition body. The first graded transition body has a first lattice parameter at a first surface and a second lattice parameter at a second surface opposite the first surface. The second transition body has a smaller lattice parameter at a lower surface overlying the second surface of the first graded transition body and a larger lattice parameter at an upper surface of the second transition body. The second transition body includes at least two transition modules each having at least three interlayers. The first graded transition body and the second transition body reducing strain for the semiconductor structure.