The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2025
Filed:
Jun. 24, 2021
Applicant:
Infineon Technologies Americas Corp., El Segundo, CA (US);
Inventor:
Michael A. Briere, Manhattan Beach, CA (US);
Assignee:
Infineon Technologies Americas Corp., El Segundo, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 21/8258 (2006.01); H01L 29/04 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0617 (2013.01); H01L 21/8258 (2013.01); H01L 27/0688 (2013.01); H01L 29/045 (2013.01); H01L 29/4175 (2013.01); H01L 29/42316 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01); H01L 29/2003 (2013.01);
Abstract
An integrated semiconductor device includes a silicon body that includes <111> single crystal silicon, a semiconductor device that is disposed within the silicon body, a III-nitride body disposed on the silicon body, and a III-nitride device that is disposed within the III-nitride body, wherein the semiconductor device is operatively coupled to the III-nitride device.