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For the Inventor, By the Inventor

Zhudong, Taiwan

Jiun-Lei Jerry Yu

USPTO Granted Patents = 96 

Average Co-Inventor Count = 5.4

ph-index = 6

Forward Citations = 149(Granted Patents)

Forward Citations (Not Self Cited) = 106(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Zhudong Township, Hsinchu County, TW (2014 - 2017)
  • Zhudong Townhip, TW (2017)
  • Hsinchu, TW (2018)
  • Zhudong Township, TW (2013 - 2024)
  • Hsinchu County, TW (2015 - 2024)

Company Filing History:

goldMedal96 out of 40,850 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2013-2025

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Areas of Expertise:
High Electron Mobility Transistor
III-V Devices
E-FET Integration
Wafer-on-Wafer Technology
Source Leakage Suppression
Crack Stop Ring Trench
Front-End-of-Line Processing
Semiconductor Structures
Transistor Manufacturing
Power Transistor Design
Isolation Structures
Barrier Structures
96 patents (USPTO):Explore Patents
1. 12451419 - Wafer-on-wafer cascode HEMT device (2025-10-21),
2. 12419074 - Barrier structure configured to increase performance of III-V devices (2025-09-16),
3. 12324211 - Ring transistor structure (2025-06-03),
4. 12278272 - Source leakage current suppression by source surrounding gate structure (2025-04-14),
5. 12272741 - Integration of p-channel and n-channel E-FET III-V devices with optimization of device performance (2025-04-08),
6. 12230690 - Method of forming a high electron mobility transistor (2025-02-18),
7. 12107156 - Semiconductor structure, HEMT structure and method of forming the same (2024-10-01),
8. 12094838 - Crack stop ring trench to prevent epitaxy crack propagation (2024-09-17),
9. 12087820 - Semiconductor device having a plurality of III-V semiconductor layers (2024-09-10),
10. 12046537 - Front-end-of-line (FEOL) through semiconductor-on-substrate via (TSV) (2024-07-23),
11. 11843047 - Integration of p-channel and n-channel E-FET III-V devices without parasitic channels (2023-12-12),
12. 11824109 - Integration of p-channel and n-channel E-FET III-V devices with optimization of device performance (2023-11-21),
13. 11804538 - Method of forming a high electron mobility transistor (2023-10-31),
14. 11798899 - Crack stop ring trench to prevent epitaxy crack propagation (2023-10-24),
15. 11791388 - Source leakage current suppression by source surrounding gate structure (2023-10-17),

Title: The Innovative Journey of Jiun-Lei Jerry Yu

Introduction: Jiun-Lei Jerry Yu, a talented inventor hailing from Zhudong, Taiwan, has made significant contributions to the field of technology through his groundbreaking innovations and patents.

Latest Patents: Yu's latest patents focus on advancements in renewable energy technologies, particularly in the development of solar panels with increased efficiency and durability.

Career Highlights: With a career spanning over two decades, Yu has worked with leading tech companies in Taiwan, spearheading research and development projects that have led to the creation of cutting-edge products in the semiconductor and electronics industries.

Collaborations: Throughout his career, Yu has collaborated with top researchers and engineers from renowned universities and research institutions worldwide, fostering a culture of innovation and knowledge sharing.

Conclusion: Jiun-Lei Jerry Yu's passion for innovation and his relentless pursuit of technological advancement continue to inspire the next generation of inventors and engineers, solidifying his legacy as a visionary in the world of patents and inventions.

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