The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 12, 2023
Filed:
May. 24, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Man-Ho Kwan, Kowloon, HK;
Fu-Wei Yao, Hsinchu, TW;
Chun Lin Tsai, Hsin-Chu, TW;
Jiun-Lei Jerry Yu, Zhudong Township, TW;
Ting-Fu Chang, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
In some embodiments, the present disclosure relates to an integrated transistor device, including a first barrier layer arranged over a substrate. Further, an undoped layer may be arranged over the first barrier layer and have a n-channel device region laterally next to a p-channel device region. The n-channel device region of the undoped layer has a topmost surface that is above a topmost surface of the p-channel device region of the undoped layer. The integrated transistor device may further comprise a second barrier layer over the n-channel device region of the undoped layer. A first gate electrode is arranged over the second barrier layer, and a second gate electrode is arranged over the p-channel device region of the undoped layer.