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For the Inventor, By the Inventor

Hsinchu, Taiwan

Fu-Wei Yao

USPTO Granted Patents = 76 

Average Co-Inventor Count = 5.6

ph-index = 7

Forward Citations = 147(Granted Patents)

Forward Citations (Not Self Cited) = 112(Oct 12, 2025)


Inventors with similar research interests:


Company Filing History:

goldMedal76 out of 40,635 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2013-2025

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76 patents (USPTO):
1. 12272741 - Integration of p-channel and n-channel E-FET III-V devices with optimization of device performance (2025-04-08),
2. 12230690 - Method of forming a high electron mobility transistor (2025-02-18),
3. 11854909 - Semiconductor structure and method for manufacturing thereof (2023-12-26),
4. 11843047 - Integration of p-channel and n-channel E-FET III-V devices without parasitic channels (2023-12-12),
5. 11824109 - Integration of p-channel and n-channel E-FET III-V devices with optimization of device performance (2023-11-21),
6. 11804538 - Method of forming a high electron mobility transistor (2023-10-31),
7. 11705486 - Isolation structure for active devices (2023-07-18),
8. 11522077 - Integration of p-channel and n-channel E-FET III-V devices with optimization of device performance (2022-12-06),
9. 11522066 - Sidewall passivation for HEMT devices (2022-12-06),
10. 11430702 - Semiconductor structure and method for manufacturing thereof (2022-08-30),
11. 11404557 - Method of forming a high electron mobility transistor (2022-08-02),
12. 11349023 - Integration of p-channel and n-channel E-FET III-V devices without parasitic channels (2022-05-31),
13. 10868136 - Sidewall passivation for HEMT devices (2020-12-15),
14. 10868135 - High electron mobility transistor structure (2020-12-15),
15. 10868134 - Method of making transistor having metal diffusion barrier (2020-12-15),

Title: Fu-Wei Yao: Trailblazing Inventor in Semiconductor Technology

Introduction:

Fu-Wei Yao, a distinguished inventor based in Hsinchu, Taiwan, is renowned for his groundbreaking work in semiconductor technology. With a total of 74 patents to his name, Yao has consistently pushed the boundaries of innovation in the field.

Latest Patents:

Yao's recent patents showcase his expertise in semiconductor structures and device integration. One of his latest inventions includes a semiconductor structure and manufacturing method that features a unique III-V layer over a silicon substrate, enhancing device performance and efficiency. Another patent focuses on the integration of p-channel and n-channel E-FET III-V devices, reducing parasitic channels and improving overall transistor functionality.

Career Highlights:

Working at Taiwan Semiconductor Manufacturing Company Limited (TSMC), Yao has been instrumental in driving technological advancements in the semiconductor industry. His contributions have played a key role in shaping TSMC's position as a leading global provider of semiconductor solutions.

Collaborations:

Throughout his career, Yao has collaborated closely with esteemed colleagues such as Jiun-Lei Jerry Yu and Chen-Ju Yu. Their combined expertise and innovative approaches have led to the development of cutting-edge technologies and solutions in the semiconductor sector.

Conclusion:

In conclusion, Fu-Wei Yao stands as a shining example of a visionary inventor whose work continues to inspire and shape the future of technology. His passion for innovation and relentless pursuit of excellence make him a true pioneer in the world of semiconductor inventions, with a lasting impact on the industry as a whole.

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