The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 18, 2023

Filed:

Oct. 27, 2020
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Fu-Wei Yao, Hsinchu, TW;

Chun Lin Tsai, Hsin-Chu, TW;

Jiun-Lei Jerry Yu, Zhudong Township, TW;

Man-Ho Kwan, Kowloon, HK;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/20 (2006.01); H01L 29/66 (2006.01); H01L 21/76 (2006.01); H01L 21/761 (2006.01); H01L 29/778 (2006.01); H01L 27/06 (2006.01); H01L 27/085 (2006.01); H01L 29/10 (2006.01); H01L 21/8252 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0646 (2013.01); H01L 21/761 (2013.01); H01L 21/7605 (2013.01); H01L 21/8252 (2013.01); H01L 27/0605 (2013.01); H01L 27/085 (2013.01); H01L 29/1075 (2013.01); H01L 29/2003 (2013.01); H01L 29/66462 (2013.01); H01L 29/778 (2013.01); H01L 29/7786 (2013.01); H01L 21/823481 (2013.01); H01L 21/823493 (2013.01);
Abstract

The present disclosure relates to an integrated chip. The integrated chip includes a first III-V semiconductor material over a substrate and a second III-V semiconductor material over the first III-V semiconductor material. The second III-V semiconductor material is a different material than the first III-V semiconductor material. A doped region has a horizontally extending segment and one or more vertically extending segments protruding vertically outward from the horizontally extending segment. The horizontally extending segment is arranged below the first III-V semiconductor material.


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