The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2025
Filed:
Jul. 19, 2022
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Aurelien Gauthier Brun, Hsinchu County, TW;
Chun Lin Tsai, Hsin-Chu, TW;
Jiun-Lei Jerry Yu, Zhudong Township, TW;
Po-Chih Chen, Hsinchu, TW;
Yun-Hsiang Wang, Hsin-Chu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/417 (2005.12); H01L 21/02 (2005.12); H01L 21/3213 (2005.12); H01L 29/20 (2005.12); H01L 29/205 (2005.12); H01L 29/423 (2005.12); H01L 29/66 (2005.12); H01L 29/778 (2005.12);
U.S. Cl.
CPC ...
H01L 29/41775 (2012.12); H01L 21/0254 (2012.12); H01L 21/32133 (2012.12); H01L 29/2003 (2012.12); H01L 29/205 (2012.12); H01L 29/42316 (2012.12); H01L 29/66462 (2012.12); H01L 29/7786 (2012.12);
Abstract
In some embodiments, the present disclosure relates to a method of forming a transistor device. The method includes forming a source contact over a substrate, forming a drain contact over the substrate, and forming a gate contact material over the substrate. The gate contact material is patterned to define a gate structure that wraps around the source contact along a continuous and unbroken path.