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Hsinchu, Taiwan

Po-Chih Chen

USPTO Granted Patents = 49 (Patent Applications = 9)

Average Co-Inventor Count = 5.7

ph-index = 6

Forward Citations = 84(Granted Patents)

Company Filing History:

49 out of 40,780

Taiwan Semiconductor Manufacturing Comp. Ltd.

Years Active: 2013-2025

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Areas of Expertise:

III-V Devices

Ring Transistor Structure

Source Leakage Current Suppression

HEMT Structure

High Voltage MOSFET

Embedded JFETs

Plasma Protection Diode

Bootstrap MOS

Rectifier Structures

Transistor Manufacturing

Semiconductor Structures

High Electron Mobility Transistor

49 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12419074 - Barrier structure configured to increase performance of III-V devices (2025-09-16),

2. 12324211 - Ring transistor structure (2025-06-03),

3. 12278272 - Source leakage current suppression by source surrounding gate structure (2025-04-14),

4. 12107156 - Semiconductor structure, HEMT structure and method of forming the same (2024-10-01),

5. 12094838 - Crack stop ring trench to prevent epitaxy crack propagation (2024-09-17),

6. 12046537 - Front-end-of-line (FEOL) through semiconductor-on-substrate via (TSV) (2024-07-23),

7. 11862675 - High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) device (2024-01-02),

8. 11798899 - Crack stop ring trench to prevent epitaxy crack propagation (2023-10-24),

9. 11791388 - Source leakage current suppression by source surrounding gate structure (2023-10-17),

10. 11715792 - Barrier structure configured to increase performance of III-V devices (2023-08-01),

11. 11664431 - Ring transistor structure (2023-05-30),

12. 11532740 - Semiconductor structure, HEMT structure and method of forming the same (2022-12-20),

13. 11521915 - Front-end-of-line (FEOL) through semiconductor-on-substrate via (TSV) (2022-12-06),

14. 11222968 - HEMT device structure and manufacturing method thereof (2022-01-11),

15. 11145713 - High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) device (2021-10-12),

Title: The Innovative Journey of Po-Chih Chen

Introduction: Po-Chih Chen, a talented inventor hailing from Hsinchu, Taiwan, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents: Po-Chih Chen's latest patents showcase his prowess in developing cutting-edge solutions for various industries, ranging from electronics to healthcare.

Career Highlights: With a career marked by ingenuity and dedication, Po-Chih Chen has successfully brought numerous inventions to life, revolutionizing the way we approach challenges in the modern world.

Collaborations: Throughout his career, Po-Chih Chen has collaborated with leading experts in the industry, fostering a culture of innovation and excellence that has propelled his inventions to new heights.

Conclusion: Po-Chih Chen's relentless pursuit of innovation and his passion for creating solutions that make a difference have solidified his reputation as a visionary inventor in the global technology landscape.

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