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Po-Chih Chen

This inventor holds 49 USPTO granted patents and 9 published patent applications, primarily in Semiconductor Structures. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2013-2025.

USPTO Granted Patents = 49 (Patent Applications = 9)

% Patents Active = 83.7

Average Co-Inventor Count = 5.7

ph-index = 6

Forward Citations = 84(Granted Patents)

Company Filing History:

49 out of 42,711

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

Years Active: 2013-2025

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Areas of Expertise:

HEMT Structure

High Voltage Applications

Transistor Design

Leakage Suppression

Barrier Structures

Epitaxy Crack Prevention

Embedded JFETs

Bootstrap MOS

TSV Technology

Plasma Protection Diode

Ring Transistor

Semiconductor Manufacturing

49 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12419074 - Barrier structure configured to increase performance of III-V devices (2025-09-16),

2. 12324211 - Ring transistor structure (2025-06-03),

3. 12278272 - Source leakage current suppression by source surrounding gate structure (2025-04-14),

4. 12107156 - Semiconductor structure, HEMT structure and method of forming the same (2024-10-01),

5. 12094838 - Crack stop ring trench to prevent epitaxy crack propagation (2024-09-17),

6. 12046537 - Front-end-of-line (FEOL) through semiconductor-on-substrate via (TSV) (2024-07-23),

7. 11862675 - High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) device (2024-01-02),

8. 11798899 - Crack stop ring trench to prevent epitaxy crack propagation (2023-10-24),

9. 11791388 - Source leakage current suppression by source surrounding gate structure (2023-10-17),

10. 11715792 - Barrier structure configured to increase performance of III-V devices (2023-08-01),

11. 11664431 - Ring transistor structure (2023-05-30),

12. 11532740 - Semiconductor structure, HEMT structure and method of forming the same (2022-12-20),

13. 11521915 - Front-end-of-line (FEOL) through semiconductor-on-substrate via (TSV) (2022-12-06),

14. 11222968 - HEMT device structure and manufacturing method thereof (2022-01-11),

15. 11145713 - High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) device (2021-10-12),

Title: The Innovative Journey of Po-Chih Chen

Introduction: Po-Chih Chen, a talented inventor hailing from Hsinchu, Taiwan, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents: Po-Chih Chen's latest patents showcase his prowess in developing cutting-edge solutions for various industries, ranging from electronics to healthcare.

Career Highlights: With a career marked by ingenuity and dedication, Po-Chih Chen has successfully brought numerous inventions to life, revolutionizing the way we approach challenges in the modern world.

Collaborations: Throughout his career, Po-Chih Chen has collaborated with leading experts in the industry, fostering a culture of innovation and excellence that has propelled his inventions to new heights.

Conclusion: Po-Chih Chen's relentless pursuit of innovation and his passion for creating solutions that make a difference have solidified his reputation as a visionary inventor in the global technology landscape.

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