The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2023
Filed:
May. 12, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Yun-Hsiang Wang, Hsin-Chu, TW;
Chun Lin Tsai, Hsin-Chu, TW;
Jiun-Lei Jerry Yu, Zhudong Township, TW;
Po-Chih Chen, Hsinchu, TW;
Chia-Ling Yeh, Jhubei, TW;
Ching Yu Chen, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
Various embodiments of the present disclosure are directed toward an integrated chip including an undoped layer overlying a substrate. A first barrier layer overlies the undoped layer. A doped layer overlies the first barrier layer. Further, a second barrier layer overlies the first barrier layer, where the second barrier layer is laterally offset from a perimeter of the doped layer by a non-zero distance. The first and second barrier layers comprise a same III-V semiconductor material. A first atomic percentage of a first element within the first barrier layer is less than a second atomic percentage of the first element within the second barrier layer.