Jhubei, Taiwan

Chia-Ling Yeh

USPTO Granted Patents = 8 

Average Co-Inventor Count = 2.8

ph-index = 2

Forward Citations = 4(Granted Patents)


Location History:

  • Hsinchu, TW (2016 - 2023)
  • Jhubei, TW (2018 - 2023)

Company Filing History:


Years Active: 2016-2025

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8 patents (USPTO):Explore Patents

Title: Chia-Ling Yeh: Innovator in Semiconductor Technology

Introduction

Chia-Ling Yeh is a prominent inventor based in Jhubei, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 8 patents. His work focuses on enhancing the performance of III-V devices and developing advanced semiconductor structures.

Latest Patents

One of his latest patents is titled "Barrier structure configured to increase performance of III-V devices." This patent describes an integrated chip that includes an undoped layer overlying a substrate, with a first barrier layer and a doped layer strategically positioned to optimize device performance. Another notable patent is for a "High Electron Mobility Transistor (HEMT) with a back barrier layer." This invention aims to block electron leakage and improve threshold voltage, utilizing a Gallium Nitride (GaN) layer and a back barrier layer made of Aluminum Nitride (AlN).

Career Highlights

Chia-Ling Yeh has worked with Taiwan Semiconductor Manufacturing Company Limited, where he has contributed to various innovative projects. His expertise in semiconductor technology has positioned him as a key player in the industry.

Collaborations

Throughout his career, Chia-Ling Yeh has collaborated with notable colleagues, including Ching Yu Chen and Jiun-Lei Jerry Yu. These partnerships have fostered a collaborative environment that encourages innovation and the development of cutting-edge technologies.

Conclusion

Chia-Ling Yeh's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the field. His work continues to pave the way for advancements in electronic devices and materials.

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