The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2018
Filed:
Jul. 21, 2016
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Chia-Ling Yeh, Jhubei, TW;
Man-Ho Kwan, Kowloon, HK;
Kuei-Ming Chen, New Taipei, TW;
Jiun-Lei Jerry Yu, Zhudong Township, TW;
Chun Lin Tsai, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
An enhancement mode field-effect transistor (E-FET) for high static performance is provided. A composite barrier layer comprises a lower barrier layer and an upper barrier layer. The upper barrier layer is arranged over the lower barrier layer and has a different polarization than the lower barrier layer. Further, the composite barrier layer comprises a gate opening. A channel layer is arranged under the composite barrier layer, such that a heterojunction is defined at an interface between the channel layer and the composite barrier layer. A gate dielectric layer is arranged over the composite barrier layer and within the gate opening. A gate electrode is arranged over the gate dielectric layer. A method for manufacturing the E-FET is also provided.