The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 02, 2024
Filed:
Aug. 31, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Karthick Murukesan, Hsinchu, TW;
Wen-Chih Chiang, Hsinchu, TW;
Chun Lin Tsai, Hsin-Chu, TW;
Ker-Hsiao Huo, Zhubei, TW;
Kuo-Ming Wu, Hsinchu, TW;
Po-Chih Chen, Hsinchu, TW;
Ru-Yi Su, Kouhu Township, TW;
Shiuan-Jeng Lin, Hsinchu, TW;
Yi-Min Chen, Hsinchu, TW;
Hung-Chou Lin, Douliu, TW;
Yi-Cheng Chiu, New Taipei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
Various embodiments of the present application are directed towards an integrated circuit (IC) in which a high voltage metal-oxide-semiconductor (HVMOS) device is integrated with a high voltage junction termination (HVJT) device. In some embodiments, a first drift well and a second drift well are in a substrate. The first and second drift wells border in a ring-shaped pattern and have a first doping type. A peripheral well is in the substrate and has a second doping type opposite the first doping type. The peripheral well surrounds and separates the first and second drift wells. A body well is in the substrate and has the second doping type. Further, the body well overlies the first drift well and is spaced from the peripheral well by the first drift well. A gate electrode overlies a junction between the first drift well and the body well.