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For the Inventor, By the Inventor

Hsinchu, Taiwan

Shiuan-Jeng Lin

This inventor holds 25 USPTO granted patents and 7 published patent applications, primarily in Semiconductor Devices. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2015-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shiuan-Jeng Lin. Retrieved from https://idiyas.com/inventor/shiuan-jeng-lin

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 25 

% Patents Active = 100.0

Average Co-Inventor Count = 6.4

ph-index = 4

Forward Citations = 39(Granted Patents)


Company Filing History:

goldMedal25 out of 42,872 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2015-2026

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Areas of Expertise:
Semiconductor Device
High Voltage MOS
Capacitor
Parasitic Capacitor
Bipolar Junction Transistor
Process Charging Damage
Bootstrap MOS
Non-Volatile Memory Cells
Field-Effect Transistor
Metal-Insulator-Metal Capacitor
Electrode Scheme
25 patents (USPTO):Explore Patents
1. 12583740 - Inter-poly connection for parasitic capacitor and die size improvement (2026-03-24),
2. 12211910 - Bipolar junction transistor (BJT) and fabricating method thereof (2025-01-28),
3. 12074162 - Structure and formation method of semiconductor device with capacitors (2024-08-27),
4. 12068227 - Structures and methods for reducing process charging damages (2024-08-20),
5. 12062686 - Structure and formation method of semiconductor device with capacitors (2024-08-13),
6. 12033951 - Alignment mark structure and method for making (2024-07-09),
7. 11942543 - Semiconductor device structure with high voltage device (2024-03-26),
8. 11862675 - High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) device (2024-01-02),
9. 11688666 - Structures and methods for reducing process charging damages (2023-06-27),
10. 11424359 - Semiconductor device structure with high voltage device (2022-08-23),
11. 11407636 - Inter-poly connection for parasitic capacitor and die size improvement (2022-08-09),
12. 11145713 - High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) device (2021-10-12),
13. 11031320 - Structures and methods for reducing process charging damages (2021-06-08),
14. 10964781 - High voltage resistor device (2021-03-30),
15. 10892360 - Semiconductor device structure with high voltage device (2021-01-12),

Title: Shiuan-Jeng Lin: Innovator from Hsinchu

Introduction: Shiuan-Jeng Lin is a renowned inventor hailing from Hsinchu, Taiwan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Lin holds several patents in various technological domains, showcasing his continuous dedication to advancing the industry with his inventive ideas.

Career Highlights: Throughout his illustrious career, Lin has demonstrated a remarkable ability to transform innovative concepts into tangible solutions, earning him a reputation as a visionary in the tech world.

Collaborations: Lin has collaborated with leading tech companies and research institutions, leveraging his expertise to drive forward cutting-edge projects and initiatives that have had a lasting impact on the industry.

Conclusion: Shiuan-Jeng Lin's passion for innovation and his relentless pursuit of excellence have solidified his position as a trailblazer in the world of technology, inspiring future generations of inventors to push the boundaries of what is possible.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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