The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2025
Filed:
Aug. 30, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Kuan-Jung Chen, Hsinchu, TW;
Chun-Ming Lin, Taichung, TW;
Tsung-Lin Lee, New Taipei, TW;
Shiuan-Jeng Lin, Hsinchu, TW;
Hung-Lin Chen, Pingtung, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
Bipolar junction transistor (BJT) structures are provided. A BJT structure includes a semiconductor substrate, a collector region formed in the semiconductor substrate, a base region formed over the collector region, an emitter region formed over the collector region, a ring-shaped shallow trench isolation (STI) region formed in the collector region, and a base dielectric layer formed over the collector region and on opposite sides of the base region. The base dielectric layer is surrounded by an inner side wall of the ring-shaped STI region.