The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 13, 2024
Filed:
Aug. 12, 2020
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Guo-Jyun Luo, Taipei, TW;
Chen-Chien Chang, Zhubei, TW;
Chiu-Hua Chung, Hsinchu, TW;
Shiuan-Jeng Lin, Hsinchu, TW;
Han-Zong Pan, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
The present disclosure relates to a semiconductor device structure. The semiconductor device structure has a first conductive layer disposed over a substrate and a first capacitor dielectric layer comprising a first dielectric material disposed over the first conductive layer. A second conductive layer is over the first capacitor dielectric layer, a second capacitor dielectric layer comprising a second dielectric material is disposed over the second conductive layer, and a third conductive layer is over the second capacitor dielectric layer. A first barrier layer is disposed between an upper surface of the first conductive layer and a lower surface of the first capacitor dielectric layer.