The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2024
Filed:
Jun. 17, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Guo-Jyun Luo, Taipei, TW;
Chen-Chien Chang, Zhubei, TW;
Chiu-Hua Chung, Hsinchu, TW;
Shiuan-Jeng Lin, Hsinchu, TW;
Han-Zong Pan, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
The present disclosure relates to a semiconductor structure. The semiconductor structure includes a lower electrode over a substrate, a first capacitor dielectric layer over the lower electrode, an intermediate electrode over the first capacitor dielectric layer, and a second capacitor dielectric layer is over the intermediate electrode. An upper electrode is over the second capacitor dielectric layer. The upper electrode is completely confined over the intermediate electrode. A first protection layer is completely confined over the intermediate electrode. The first protection layer covers opposing sidewalls of the upper electrode and upper surfaces of the intermediate electrode and the upper electrode.