The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2022
Filed:
Jan. 06, 2021
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Hung-Chou Lin, Douliu, TW;
Yi-Cheng Chiu, New Taipei, TW;
Karthick Murukesan, Hsinchu, TW;
Yi-Min Chen, Hsinchu, TW;
Shiuan-Jeng Lin, Hsinchu, TW;
Wen-Chih Chiang, Hsinchu, TW;
Chen-Chien Chang, Zhubei, TW;
Chih-Yuan Chan, Kaohsiung, TW;
Kuo-Ming Wu, Hsinchu, TW;
Chun-Lin Tsai, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
A high-voltage semiconductor device structure is provided. The high-voltage semiconductor device structure includes a semiconductor substrate, a source ring in the semiconductor substrate, and a drain region in the semiconductor substrate. The high-voltage semiconductor device structure also includes a doped ring surrounding sides and a bottom of the source ring and a well region surrounding sides and bottoms of the drain region and the doped ring. The well region has a conductivity type opposite to that of the doped ring. The high-voltage semiconductor device structure further includes a conductor electrically connected to the drain region and extending over and across a periphery of the well region. In addition, the high-voltage semiconductor device structure includes a shielding element ring between the conductor and the semiconductor substrate. The shielding element ring extends over and across the periphery of the well region.