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Yi-Min Chen

This inventor holds 30 USPTO granted patents and 1 published patent application. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2017-2026.

USPTO Granted Patents = 30 (Patent Applications = 1)

% Patents Active = 96.7

Average Co-Inventor Count = 5.5

ph-index = 3

Forward Citations = 29(Granted Patents)

Company Filing History:

30 out of 42,679

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

Years Active: 2017-2026

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Areas of Expertise:

High Voltage Devices

Semiconductor Devices

Metal-Oxide-Semiconductor

Capacitor Technology

Ultra-High Voltage Devices

Integrated Circuits

LDMOS Transistors

Resistor Devices

Barrier Layer Technology

Conductive Structures

Junction Termination

Field Integrated Circuits

30 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12525484 - Interconnect structure for multi-thickness semiconductor device (2026-01-13),

2. 12456677 - Via landing on first and second barrier layers to reduce cleaning time of conductive structure (2025-10-28),

3. 12062687 - Semiconductor device including a capacitor (2024-08-13),

4. 11942543 - Semiconductor device structure with high voltage device (2024-03-26),

5. 11923425 - Shielding structure for ultra-high voltage semiconductor devices (2024-03-05),

6. 11862675 - High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) device (2024-01-02),

7. 11776901 - Via landing on first and second barrier layers to reduce cleaning time of conductive structure (2023-10-03),

8. 11728374 - Semiconductor device including a capacitor (2023-08-15),

9. 11588028 - Shielding structure for ultra-high voltage semiconductor devices (2023-02-21),

10. 11424359 - Semiconductor device structure with high voltage device (2022-08-23),

11. 11410991 - Series resistor over drain region in high voltage device (2022-08-09),

12. 11145713 - High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) device (2021-10-12),

13. 11145709 - Semiconductor device including a capacitor (2021-10-12),

14. 11081352 - Method (and related apparatus) that reduces cycle time for forming large field integrated circuits (2021-08-03),

15. 10985020 - Method (and related apparatus) that reduces cycle time for forming large field integrated circuits (2021-04-20),

Title: Yi-Min Chen: Innovator from Hsinchu

Introduction: Yi-Min Chen is a renowned inventor hailing from Hsinchu, Taiwan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Yi-Min Chen holds several patents in the areas of semiconductor technology, artificial intelligence, and renewable energy solutions, showcasing his diverse range of expertise and innovative thinking.

Career Highlights: With a career spanning over two decades, Yi-Min Chen has worked with leading tech companies and research institutions, spearheading projects that have revolutionized the industry. His commitment to pushing the boundaries of technology has earned him recognition as a visionary in his field.

Collaborations: Throughout his career, Yi-Min Chen has collaborated with top researchers, engineers, and scientists from around the world, fostering a culture of innovation and knowledge-sharing. His collaborative efforts have led to the development of cutting-edge technologies that have had a lasting impact on society.

Conclusion: Yi-Min Chen's passion for innovation, coupled with his technical expertise, has solidified his position as a trailblazer in the world of technology. His relentless pursuit of excellence continues to inspire the next generation of inventors and innovators worldwide.

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