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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11081352 B1

PDFFull Text
Date of Patent:
Aug. 03, 2021

Filed:

Mar. 13, 2020

Method (and related apparatus) that reduces cycle time for forming large field integrated circuits

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Wen-Chen Lu, Zhubei, TW;

Ming-Chang Hsieh, Jhudong Township, TW;

Yi-Min Chen, Hsinchu, TW;

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Attorney:

Eschweiler & Potashnik, LLC

Primary Examiner:

Joseph C Nicely

Int. Cl.
CPC ...
H01L 21/027 (2006.01); H01L 21/768 (2006.01); H01L 23/528 (2006.01); H01L 23/31 (2006.01); H01L 23/522 (2006.01); H01L 25/065 (2006.01); H01L 25/07 (2006.01); H01L 23/535 (2006.01); G03F 7/20 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0274 (2013.01); H01L 21/76816 (2013.01); H01L 21/76877 (2013.01); H01L 21/76892 (2013.01); H01L 21/76895 (2013.01); H01L 23/3171 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 23/535 (2013.01); H01L 25/0655 (2013.01); H01L 25/072 (2013.01); G03F 7/2022 (2013.01); H01L 21/823475 (2013.01);
Abstract

In some embodiments, a method for forming an integrated circuit is provided. The method includes forming a first layer over a semiconductor wafer, the first layer having a first portion and a second portion. The first portion is patterned by projecting a first image field over the first portion of the first layer, where the first portion of the first layer corresponds to the first image field. The second portion is patterned by projecting a second image field over the second portion of the first layer, where the second portion of the first layer corresponds to the second image field. A second layer is formed over the first layer. The second layer is patterned by projecting a third image field over the second layer, where the third image field covers a majority of the first portion and a majority of the second portion of the first layer.

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