The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 12, 2021
Filed:
Jun. 12, 2019
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Hong-Yang Chen, Hsinchu, TW;
Tian Sheng Lin, Yangmei Township, TW;
Yi-Cheng Chiu, New Taipei, TW;
Hung-Chou Lin, Douliu, TW;
Yi-Min Chen, Hsinchu, TW;
Kuo-Ming Wu, Hsinchu, TW;
Chiu-Hua Chung, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 29/76 (2006.01); H01L 31/119 (2006.01); H01L 49/02 (2006.01); H01L 27/01 (2006.01); H01L 27/06 (2006.01);
U.S. Cl.
CPC ...
H01L 28/60 (2013.01); H01L 27/01 (2013.01); H01L 27/0629 (2013.01);
Abstract
A capacitor structure for a power semiconductor device includes a semiconductor substrate, an isolation insulating layer having a ring-shape and including an outer periphery and an inner periphery defining an opening region, a first electrode disposed on the isolation insulating layer, a dielectric layer disposed on the first electrode, and a second electrode disposed on the dielectric layer.