Taiwan Semiconductor Manufacturing Comp. Ltd.

Yi-Min Chen

Yi-Cheng Chiu

Hung-Chou Lin

Chun Lin Tsai

Kuo-Ming Wu

Karthick Murukesan

Wen-Chih Chiang

Shiuan-Jeng Lin

Chih-Yuan Chan

Chiu-Hua Chung

Fu-Chih Yang

Ker-Hsiao Huo

Ker Hsiao Huo

Tian Sheng Lin

Chen-Chien Chang

Kong-Beng Thei

Chien-Chih Chou

Ru-Yi Su

Po-Chih Chen

Chen-Liang Chu

Chun-Lin Tsai

Wen-Chen Lu

Ming-Chang Hsieh

Hong-Yang Chen

Yu-Hsing Chang

Te-Hsien Hsieh

Tien Sheng Lin

In some embodiments, the present disclosure relates to an integrated chip that includes a conductive structure arranged within a substrate or a first dielectric layer. A first barrier layer is arranged on outermost sidewalls and a bottom surface of the conductive structure. A second barrier layer is arranged on outer surfaces of the first barrier layer. The second barrier layer separates the first barrier layer from the substrate or the first dielectric layer. A second dielectric layer is arranged over the substrate or the first dielectric layer. A via structure extends through the second dielectric layer, is arranged directly over topmost surfaces of the first and second barrier layers, and is electrically coupled to the conductive structure through the first and second barrier layers.

Via landing on first and second barrier layers to reduce cleaning time of conductive structure

A capacitor structure for a power semiconductor device includes a semiconductor substrate, an isolation insulating layer having a ring-shape and including an outer periphery and an inner periphery defining an opening region, a first electrode disposed on the isolation insulating layer, a dielectric layer disposed on the first electrode, and a second electrode disposed on the dielectric layer.

Semiconductor device including a capacitor

A high-voltage semiconductor device structure is provided. The high-voltage semiconductor device structure includes a semiconductor substrate, a source ring in the semiconductor substrate, and a drain region in the semiconductor substrate. The high-voltage semiconductor device structure also includes a doped ring surrounding sides and a bottom of the source ring and a well region surrounding sides and bottoms of the drain region and the doped ring. The well region has a conductivity type opposite to that of the doped ring. The high-voltage semiconductor device structure further includes a conductor electrically connected to the drain region and extending over and across a periphery of the well region. In addition, the high-voltage semiconductor device structure includes a shielding element ring between the conductor and the semiconductor substrate. The shielding element ring extends over and across the periphery of the well region.

Semiconductor device structure with high voltage device

A method for manufacturing a device may include providing an ultra-high voltage (UHV) component that includes a source region and a drain region, and forming an oxide layer on a top surface of the UHV component. The method may include connecting a low voltage terminal to the source region of the UHV component, and connecting a high voltage terminal to the drain region of the UHV component. The method may include forming a shielding structure on a surface of the oxide layer provided above the drain region of the UHV component, forming a high voltage interconnection that connects to the shielding structure and to the high voltage terminal, and forming a metal routing that connects the shielding structure and the low voltage terminal.

Shielding structure for ultra-high voltage semiconductor devices

Various embodiments of the present application are directed towards an integrated circuit (IC) in which a high voltage metal-oxide-semiconductor (HVMOS) device is integrated with a high voltage junction termination (HVJT) device. In some embodiments, a first drift well and a second drift well are in a substrate. The first and second drift wells border in a ring-shaped pattern and have a first doping type. A peripheral well is in the substrate and has a second doping type opposite the first doping type. The peripheral well surrounds and separates the first and second drift wells. A body well is in the substrate and has the second doping type. Further, the body well overlies the first drift well and is spaced from the peripheral well by the first drift well. A gate electrode overlies a junction between the first drift well and the body well.

High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) device

Some embodiments relate to an integrated circuit. The integrated circuit includes a ring-shaped drain region having an inner edge and an outer edge. A channel region surrounds the ring-shaped drain region. A source region surrounds the channel region. The channel region separates the drain region from the source region. A gate electrode is arranged over the channel region and is separated from the channel region by a gate dielectric. An inner edge of the gate electrode is proximate to the drain region. A resistor structure is arranged over and spaced apart from an upper surface of the substrate. The resistor structure has a first end and a second end which are connected by a curved or polygonal path of resistive material. The first end is coupled to the ring-shaped drain. The resistor has an outer perimeter that is surrounded by the inner edge of the ring-shaped drain region.

Series resistor over drain region in high voltage device

In some embodiments, a method for forming an integrated circuit is provided. The method includes forming a first layer over a semiconductor wafer, the first layer having a first portion and a second portion. The first portion is patterned by projecting a first image field over the first portion of the first layer, where the first portion of the first layer corresponds to the first image field. The second portion is patterned by projecting a second image field over the second portion of the first layer, where the second portion of the first layer corresponds to the second image field. A second layer is formed over the first layer. The second layer is patterned by projecting a third image field over the second layer, where the third image field covers a majority of the first portion and a majority of the second portion of the first layer.

Method (and related apparatus) that reduces cycle time for forming large field integrated circuits

The present disclosure, in some embodiments, relates to a high voltage resistor device. The device includes a buried well region disposed within a substrate and having a first doping type. A drift region is disposed within the substrate and contacts the buried well region. The drift region has the first doping type. A body region is disposed within the substrate and has a second doping type. The body region laterally contacts the drift region and vertically contacts the buried well region. An isolation structure is over the drift region and a resistor structure is over the isolation structure.

High voltage resistor device

Growing community of inventors

Hsinchu, Taiwan

Yi-Min Chen