The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2021
Filed:
Nov. 26, 2018
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Yi-Cheng Chiu, New Taipei, TW;
Wen-Chih Chiang, Hsinchu, TW;
Chun Lin Tsai, Hsin-Chu, TW;
Kuo-Ming Wu, Hsinchu, TW;
Shiuan-Jeng Lin, Hsinchu, TW;
Yi-Min Chen, Hsinchu, TW;
Hung-Chou Lin, Douliu, TW;
Karthick Murukesan, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
The present disclosure, in some embodiments, relates to a high voltage resistor device. The device includes a buried well region disposed within a substrate and having a first doping type. A drift region is disposed within the substrate and contacts the buried well region. The drift region has the first doping type. A body region is disposed within the substrate and has a second doping type. The body region laterally contacts the drift region and vertically contacts the buried well region. An isolation structure is over the drift region and a resistor structure is over the isolation structure.