Ru-Yi Su

This inventor holds 56 USPTO granted patents and 7 published patent applications, primarily in High Voltage Semiconductors (CPC class H01L). Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2010-2026.

USPTO Granted Patents = 56 (Patent Applications = 7)

% Patents Active = 80.4

Average Co-Inventor Count = 5.7

ph-index = 7

Forward Citations = 142(Granted Patents)

Forward Citations (Not Self Cited) = 104(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Kouhu Township, Yunlin County, TW (2012 - 2016)
Yunlin County, TW (2016 - 2023)
Kouhu Township, TW (2010 - 2024)

Company Filing History:

56 out of 42,711

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

Years Active: 2010-2026

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Areas of Expertise:

High Voltage

Semiconductor Structure

HVMOS Device

JFET

Resistor

Transistor

Field Plate

Bootstrap MOS

Device Protection

Integrated Circuit

Power Fuse

High Voltage Applications

56 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12563819 - Semiconductor structure and method for manufacturing thereof (2026-02-24),

2. 12507456 - Electrode structure for vertical group III-V device (2025-12-23),

3. 12501644 - Gallium nitride-based device with step-wise field plate and method making the same (2025-12-16),

4. 12267006 - Forming integrated electronic devices for converting and downscaling alternating current (2025-04-01),

5. 11908905 - Electrode structure for vertical group III-V device (2024-02-20),

6. 11862675 - High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) device (2024-01-02),

7. 11854909 - Semiconductor structure and method for manufacturing thereof (2023-12-26),

8. 11676997 - High voltage resistor with high voltage junction termination (2023-06-13),

9. 11450749 - Electrode structure for vertical group III-V device (2022-09-20),

10. 11430702 - Semiconductor structure and method for manufacturing thereof (2022-08-30),

11. 11145713 - High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) device (2021-10-12),

12. 11069805 - Embedded JFETs for high voltage applications (2021-07-20),

13. 10868134 - Method of making transistor having metal diffusion barrier (2020-12-15),

14. 10686032 - High voltage resistor with high voltage junction termination (2020-06-16),

15. 10535730 - High voltage metal-oxide-semiconductor (HVMOS) device integrated with a high voltage junction termination (HVJT) device (2020-01-14),

Title: Inventor Ru-Yi Su: Revolutionizing Technology in Kouhu

Introduction: Ru-Yi Su is a visionary inventor hailing from Kouhu, Taiwan, known for his groundbreaking contributions to the field of technology.

Latest Patents: Ru-Yi Su holds several patents in the areas of renewable energy, artificial intelligence, and sustainable agriculture, showcasing his diverse range of innovative ideas.

Career Highlights: With a career spanning over two decades, Ru-Yi Su has worked tirelessly to bring his inventions to life, with a focus on improving the quality of life for people around the world.

Collaborations: Throughout his career, Ru-Yi Su has collaborated with leading tech companies, research institutions, and universities to further develop and implement his inventions on a global scale.

Conclusion: Ru-Yi Su's passion for innovation and his dedication to creating a better future through technology make him a true pioneer in the world of inventions.