The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2023
Filed:
Jun. 12, 2020
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Ru-Yi Su, Yunlin County, TW;
Fu-Chih Yang, Fengshan, TW;
Chun Lin Tsai, Hsin-Chu, TW;
Chih-Chang Cheng, Hsin-Chu, TW;
Ruey-Hsin Liu, Hsin-Chu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
High voltage semiconductor devices are described herein. An exemplary semiconductor device includes a first doped region and a second doped region disposed in a substrate. The first doped region and the second doped region are oppositely doped and adjacently disposed in the substrate. A first isolation structure and a second isolation structure are disposed over the substrate, such that each are disposed at least partially over the first doped region. The first isolation structure is spaced apart from the second isolation structure. A resistor is disposed over a portion of the first isolation structure and electrically coupled to the first doped region. A field plate disposed over a portion of the second doped region and electrically coupled to the second doped region.