The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 15, 2020
Filed:
Aug. 10, 2016
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
King-Yuen Wong, Tuen Mun N. T., HK;
Po-Chih Chen, Hsinchu, TW;
Chen-Ju Yu, Jiaoxi Township, TW;
Fu-Chih Yang, Fengshan, TW;
Jiun-Lei Jerry Yu, Zhudong Township, TW;
Fu-Wei Yao, Hsinchu, TW;
Ru-Yi Su, Kouhu Township, TW;
Yu-Syuan Lin, Lukang Township, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A channel layer is grown over a substrate, and an active layer is grown over the channel layer, wherein the active layer has a band gap discontinuity with the channel layer. A dielectric layer is deposited over the active layer, and the dielectric layer is patterned to expose a portion of the active layer. A metal diffusion barrier is formed over the exposed portion of the active layer, and a gate is deposited over the metal diffusion barrier.