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For the Inventor, By the Inventor

Pasadena, CA, United States of America

Robert A Beach

USPTO Granted Patents = 78

Average Co-Inventor Count = 2.2

ph-index = 14

Forward Citations = 563(Granted Patents)

Forward Citations (Not Self Cited) = 539(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Pasadena, CA (US) (2003)
  • Altadena, CA (US) (2003 - 2017)
  • La Crescenta, CA (US) (2013 - 2020)

Company Filing History:

goldMedal47 out of 1,231 
 
International Rectifier Corporation
 patents
silverMedal24 out of 66 
 
Efficient Power Conversion Corporation
 patents
bronzeMedal3 out of 4,550 
 
California Institute of Technology
 patents
4. 3 out of 278 
 
Infineon Technologies Americas Corp.
 patents
5. 1 out of 2,451 
 
United States of America As Represented by the Administrator of Nasa
 patents

Years Active: 2003-2020

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Areas of Expertise:
GaN Power Switch
Enhancement-Mode GaN Transistor
Semiconductor Devices
Polysilicon Layers
III-Nitride Power Semiconductor
Integrated Circuit Design
Heterojunction Device
Field Effect Transistor
Self-Aligned Isolation
Trench Structure
Dopant Diffusion Modulation
Multi-Channel Heterojunction
78 patents (USPTO):Explore Patents
1. 10790811 - Cascaded bootstrapping GaN power switch and driver (2020-09-29),
2. 10622455 - Enhancement-mode GaN transistor with selective and nonselective etch layers for improved uniformity in GaN spacer thickness (2020-04-14),
3. 10600674 - Semiconductor devices with back surface isolation (2020-03-24),
4. 10312260 - GaN transistors with polysilicon layers used for creating additional components (2019-06-04),
5. 10312131 - Semiconductor devices with back surface isolation (2019-06-04),
6. 10096702 - Multi-step surface passivation structures and methods for fabricating same (2018-10-09),
7. 10090274 - Flip chip interconnection with reduced current density (2018-10-02),
8. 9911600 - Fabrication of semiconductor device using alternating high and low temperature layers (2018-03-06),
9. 9837438 - GaN transistors with polysilicon layers used for creating additional components (2017-12-05),
10. 9640649 - III-nitride power semiconductor with a field relaxation feature (2017-05-02),
11. 9607876 - Semiconductor devices with back surface isolation (2017-03-28),
12. 9583480 - Integrated circuit with matching threshold voltages and method for making same (2017-02-28),
13. 9472626 - High performance III-nitride power device (2016-10-18),
14. 9331191 - GaN device with reduced output capacitance and process for making same (2016-05-03),
15. 9214528 - Method to fabricate self-aligned isolation in gallium nitride devices and integrated circuits (2015-12-15),

Title: The Innovative Journey of Robert A. Beach

Introduction: Robert A. Beach is a pioneering inventor based in Pasadena, California. With a passion for creating groundbreaking solutions, he has made significant contributions to the field of technology through his inventive spirit and dedication to innovation.

Latest Patents: Robert A. Beach holds several patents in various technological domains, showcasing his versatility and creativity in developing novel ideas that push the boundaries of what is possible in the industry.

Career Highlights: Throughout his illustrious career, Robert A. Beach has been recognized for his innovative approach to problem-solving and his ability to transform ideas into tangible inventions. His work has not only revolutionized the tech sector but has also inspired a new generation of inventors to think outside the box.

Collaborations: Robert A. Beach has collaborated with leading tech companies, research institutions, and universities to further his research and bring his inventions to life. His collaborative efforts have resulted in groundbreaking innovations that have had a lasting impact on the industry.

Conclusion: In conclusion, Robert A. Beach stands as a visionary inventor whose relentless pursuit of innovation has reshaped the technological landscape. His passion for creating solutions that make a difference underscores his commitment to driving progress and shaping the future of technology.

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