The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2016
Filed:
Feb. 05, 2015
Applicant:
International Rectifier Corporation, El Segundo, CA (US);
Inventors:
Assignee:
Infineon Technologies Americas Corp., El Segundo, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/20 (2006.01); H01L 21/02 (2006.01); H01L 21/285 (2006.01); H01L 29/49 (2006.01); H01L 29/778 (2006.01); H01L 29/772 (2006.01); H01L 29/205 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 29/2003 (2013.01); H01L 21/0254 (2013.01); H01L 21/02458 (2013.01); H01L 21/28581 (2013.01); H01L 29/205 (2013.01); H01L 29/401 (2013.01); H01L 29/495 (2013.01); H01L 29/4916 (2013.01); H01L 29/4966 (2013.01); H01L 29/772 (2013.01); H01L 29/7786 (2013.01); H01L 29/7787 (2013.01);
Abstract
A III-nitride semiconductor device which includes a barrier body between the gate electrode and the gate dielectric thereof.