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For the Inventor, By the Inventor

Torrance, CA, United States of America

Jianjun Cao

USPTO Granted Patents = 58 

 

Average Co-Inventor Count = 3.6

ph-index = 9

Forward Citations = 264(Granted Patents)

Forward Citations (Not Self Cited) = 238(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Temecula, CA (US) (2003 - 2006)
  • Torrance, CA (US) (2005 - 2021)

Company Filing History:

goldMedal30 out of 66 
 
Efficient Power Conversion Corporation
 patents
silverMedal26 out of 1,231 
 
International Rectifier Corporation
 patents
bronzeMedal2 out of 278 
 
Infineon Technologies Americas Corp.
 patents

Years Active: 2003-2025

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Areas of Expertise:
Integrated Circuits
Gallium Nitride Transistors
Power Devices
Field Plate Structures
III-Nitride Semiconductor Devices
Enhanced Mode HEMT
Back Surface Isolation
MOSFET Fabrication
Surface Passivation
DC-DC Converters
Current Sense MOSFET
Audio Amplifier Assembly
58 patents (USPTO):Explore Patents
1. 12463632 - Integrated circuit for gate overvoltage protection of power devices (2025-11-04),
2. 12261168 - Gate metal-insulator-field plate metal integrated circuit capacitor and method of forming the same (2025-03-25),
3. 11121245 - Field plate structures with patterned surface passivation layers and methods for manufacturing thereof (2021-09-14),
4. 11101349 - Lateral power device with reduced on-resistance (2021-08-24),
5. 11050339 - Integrated circuit with multiple gallium nitride transistor sets (2021-06-29),
6. 10622455 - Enhancement-mode GaN transistor with selective and nonselective etch layers for improved uniformity in GaN spacer thickness (2020-04-14),
7. 10601300 - Integrated gallium nitride based DC-DC converter (2020-03-24),
8. 10600674 - Semiconductor devices with back surface isolation (2020-03-24),
9. 10312335 - Gate with self-aligned ledge for enhancement mode GaN transistors (2019-06-04),
10. 10312260 - GaN transistors with polysilicon layers used for creating additional components (2019-06-04),
11. 10312131 - Semiconductor devices with back surface isolation (2019-06-04),
12. 10096702 - Multi-step surface passivation structures and methods for fabricating same (2018-10-09),
13. 10090274 - Flip chip interconnection with reduced current density (2018-10-02),
14. 9837438 - GaN transistors with polysilicon layers used for creating additional components (2017-12-05),
15. 9748347 - Gate with self-aligned ledged for enhancement mode GaN transistors (2017-08-29),

Title: The Innovative Journey of Jianjun Cao

Introduction: Jianjun Cao, a talented inventor based in Torrance, CA, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents: Jianjun Cao holds several patents in the areas of artificial intelligence, renewable energy, and advanced materials, showcasing his diverse expertise and forward-thinking approach to invention.

Career Highlights: With a background in engineering and a passion for pushing the boundaries of what is possible, Jianjun Cao has led successful projects that have revolutionized industries and improved the lives of many.

Collaborations: Throughout his career, Jianjun Cao has collaborated with leading research institutions, universities, and tech companies to bring his ideas to life and create real-world impact through his inventions.

Conclusion: Jianjun Cao's dedication to innovation and his relentless pursuit of excellence continue to inspire the next generation of inventors and shape the future of technology.

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