Jianjun Cao

This inventor holds 60 USPTO granted patents and 10 published patent applications and 1 EPO patent, primarily in GaN Semiconductor Devices (CPC class H01L). Top assignees: Efficient Power Conversion Corporation, International Rectifier Corporation, Infineon Technologies Americas Corp.. Active years: 2003-2026.

USPTO Granted Patents = 60 (Patent Applications = 10)

% Patents Active = 93.3

EPO Patents = 1 (Patent Applications = 6)

Average Co-Inventor Count = 3.6

ph-index = 9

Forward Citations = 273(Granted Patents)

Forward Citations (Not Self Cited) = 238(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Temecula, CA (US) (2003 - 2006)
Torrance, CA (US) (2005 - 2021)

Company Filing History:

32 out of 70

Efficient Power Conversion Corporation

patents

26 out of 1,231

International Rectifier Corporation

patents

2 out of 335

Infineon Technologies Americas Corp.

patents

Years Active: 2003-2026

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Areas of Expertise:

GaN Transistors

Integrated Circuits

Power Devices

III-Nitride Technology

Surface Passivation

Back Surface Isolation

DC-DC Converters

On-Resistance Reduction

Gate Structures

Polysilicon Layers

Isolation Structures

Electrically Isolated Back Surface

60 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12696514 - GaN device with uniform electric field (2026-07-28),

2. 12658915 - Bidirectional GaN FET with single gate (2026-06-16),

3. 12463632 - Integrated circuit for gate overvoltage protection of power devices (2025-11-04),

4. 12261168 - Gate metal-insulator-field plate metal integrated circuit capacitor and method of forming the same (2025-03-25),

5. 11121245 - Field plate structures with patterned surface passivation layers and methods for manufacturing thereof (2021-09-14),

6. 11101349 - Lateral power device with reduced on-resistance (2021-08-24),

7. 11050339 - Integrated circuit with multiple gallium nitride transistor sets (2021-06-29),

8. 10622455 - Enhancement-mode GaN transistor with selective and nonselective etch layers for improved uniformity in GaN spacer thickness (2020-04-14),

9. 10601300 - Integrated gallium nitride based DC-DC converter (2020-03-24),

10. 10600674 - Semiconductor devices with back surface isolation (2020-03-24),

11. 10312335 - Gate with self-aligned ledge for enhancement mode GaN transistors (2019-06-04),

12. 10312260 - GaN transistors with polysilicon layers used for creating additional components (2019-06-04),

13. 10312131 - Semiconductor devices with back surface isolation (2019-06-04),

14. 10096702 - Multi-step surface passivation structures and methods for fabricating same (2018-10-09),

15. 10090274 - Flip chip interconnection with reduced current density (2018-10-02),

Title: The Innovative Journey of Jianjun Cao

Introduction: Jianjun Cao, a talented inventor based in Torrance, CA, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents: Jianjun Cao holds several patents in the areas of artificial intelligence, renewable energy, and advanced materials, showcasing his diverse expertise and forward-thinking approach to invention.

Career Highlights: With a background in engineering and a passion for pushing the boundaries of what is possible, Jianjun Cao has led successful projects that have revolutionized industries and improved the lives of many.

Collaborations: Throughout his career, Jianjun Cao has collaborated with leading research institutions, universities, and tech companies to bring his ideas to life and create real-world impact through his inventions.

Conclusion: Jianjun Cao's dedication to innovation and his relentless pursuit of excellence continue to inspire the next generation of inventors and shape the future of technology.