The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2020
Filed:
Jun. 13, 2018
Efficient Power Conversion Corporation, El Segundo, CA (US);
Jianjun Cao, Torrance, CA (US);
Robert Beach, La Crescenta, CA (US);
Guangyuan Zhao, Torrance, CA (US);
Yoganand Saripalli, El Segundo, CA (US);
Zhikai Tang, Torrance, CA (US);
Efficient Power Conversion Corporation, El Segundo, CA (US);
Abstract
An enhancement-mode transistor gate structure which includes a spacer layer of GaN disposed above a barrier layer, a first layer of pGaN above the spacer layer, an etch stop layer of p-type Al-containing column III-V material, for example, pAlGaN or pAlInGaN, disposed above the first p-GaN layer, and a second p-GaN layer, having a greater thickness than the first p-GaN layer, disposed over the etch stop layer. The etch stop layer minimizes damage to the underlying barrier layer during gate etching steps, and improves GaN spacer thickness uniformity.