Company Filing History:

10 out of 66

Efficient Power Conversion Corporation

patents

1 out of 1

Efficient Power Coversion Corporation

patent

1 out of 1

Efficient Power Converson Corporation

patent

Years Active: 2015-2020

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12 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 10622455 - Enhancement-mode GaN transistor with selective and nonselective etch layers for improved uniformity in GaN spacer thickness (2020-04-14),

2. 10600674 - Semiconductor devices with back surface isolation (2020-03-24),

3. 10312260 - GaN transistors with polysilicon layers used for creating additional components (2019-06-04),

4. 10312131 - Semiconductor devices with back surface isolation (2019-06-04),

5. 10096702 - Multi-step surface passivation structures and methods for fabricating same (2018-10-09),

6. 9837438 - GaN transistors with polysilicon layers used for creating additional components (2017-12-05),

7. 9583480 - Integrated circuit with matching threshold voltages and method for making same (2017-02-28),

8. 9331191 - GaN device with reduced output capacitance and process for making same (2016-05-03),

9. 9214528 - Method to fabricate self-aligned isolation in gallium nitride devices and integrated circuits (2015-12-15),

10. 9214461 - GaN transistors with polysilicon layers for creating additional components (2015-12-15),

11. 9214399 - Integrated circuit with matching threshold voltages and method for making same (2015-12-15),

12. 9171911 - Isolation structure in gallium nitride devices and integrated circuits (2015-10-27),

Title: The Innovative Mind of Guangyuan Zhao: Pioneering Progress in Semiconductor Technology

Introduction: Guangyuan Zhao, a prominent inventor based in Torrance, CA, has made significant contributions to the field of semiconductor technology. With a portfolio of 12 patents to his name, his inventions have played a crucial role in advancing the efficiency and capabilities of electronic devices.

Latest Patents: Guangyuan Zhao's latest patents showcase his expertise in enhancement-mode GaN transistors and semiconductor devices. One notable patent involves an enhancement-mode GaN transistor featuring selective and nonselective etch layers. This innovative transistor gate structure includes a spacer layer of GaN above a barrier layer, enhancing the uniformity of GaN spacer thickness and minimizing damage during gate etching processes. Another important patent is for semiconductor devices with back surface isolation. This invention introduces circuits and structures that enable independent connections of surrounding materials in semiconductor devices, improving overall device functionality.

Career Highlights: Throughout his career, Guangyuan Zhao has been associated with Efficient Power Conversion Corporation, where he has worked on pioneering technologies that bridge the gap between efficiency and performance in power electronics. His contributions have been instrumental in the development of cutting-edge semiconductor solutions that benefit a variety of applications.

Collaborations: Guangyuan Zhao has collaborated with notable colleagues, including Jianjun Cao and Robert A. Beach. These partnerships have led to fruitful discussions and innovative projects that continue to push the boundaries of semiconductor technology.

Conclusion: Guangyuan Zhao stands as a remarkable figure in the world of inventions, particularly within the semiconductor sector. His patents not only reflect his brilliance as an inventor but also signify important advancements that will shape the future of electronic devices. As technology continues to evolve, Guangyuan Zhao's work will undoubtedly leave a lasting impact on the industry.

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