The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 2018
Filed:
May. 31, 2017
Efficient Power Conversion Corporation, El Segundo, CA (US);
Robert Beach, La Crescenta, CA (US);
Robert Strittmatter, Tujunga, CA (US);
Chunhua Zhou, Torrance, CA (US);
Guangyuan Zhao, Torrance, CA (US);
Jianjun Cao, Torrance, CA (US);
Efficient Power Conversion Corporation, El Segundo, CA (US);
Abstract
A gallium nitride (GaN) transistor which includes two or more insulator semiconductor interface regions (insulators). A first insulator disposed between the gate and drain (near the gate) minimizes the gate leakage and fields near the gate that cause high gate-drain charge (Q). A second insulator (or multiple insulators), disposed between the first insulator and the drain, minimizes electric fields at the drain contact and provides a high density of charge in the channel for low on-resistance.